REFEREED JOURNAL PAPERS

2024:

  • GaN Power Integration Technology and Its Future Prospects IEEE Transactions on Electron Devices, v. 71, (3), March 2024, article number 10375355, p. 1365-1382 Wei, Jin; Zheng, Zheyang; Tang, Gaofei; Xu, Han; Lyu, Gang; Zhang, Li; Chen, Junting; Hua, Mengyuan; Feng, Sirui; Chen, Tao; K. J. Chen

2023:

  • Adaptive Level-Shift Gate Driver with Indirect Gate Oxide Health Monitoring for Suppressing Crosstalk of SiC MOSFETs IEEE Transactions on Power Electronics, v. 38, (8), August 2023, article number 10104096, p. 10196-10212 Tang, Ho-Tin; Chung, Henry Shu-Hung; K. J. Chen
  • An Actively-Passivated p-GaN Gate HEMT with Screening Effect Against Surface Traps IEEE Electron Device Letters, v. 44, (1), January 2023, article number 9950512, p. 25-28 Wu, Yanlin; Wei, Jin; Wang, Maojun; Nuo, Muqin; Yang, Junjie; Lin, Wei; Zheng, Zheyang; Zhang, Li; Hua, Mengyuan; Yang, Xuelin; Hao, Yilong; K. J. Chen; Shen, Bo
  • Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off IEEE Journal of the Electron Devices Society, v. 11, March 2023, article number 10077731, p. 198-203 Zhang, Meng; Zhang, Yamin; Li, Baikui; Feng, Shiwei; Hua, Mengyuan; Tang, Xi; Wei, Jin; K. J. Chen.
  • Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure Applied Physics Letters, v. 123, (14), October 2023, article number 142106 Ng, Yat Hon; Zheng, Zheyang; Zhang, Li; Liu, Ruizi; Chen, Tao; Feng, Sirui; Shao, Qiming; K. J. Chen
  • Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT IEEE Electron Device Letters, v. 44, (10), October 2023, article number 10208223, p. 1592-1595 Feng, Sirui; Liao, Hang; Chen, Tao; Chen, Junting; Cheng, Yan; Hua, Mengyuan; Zheng, Zheyang; K. J. Chen
  • Endurance Improvement of GaN Bipolar Charge Trapping Memory with Back Gate Injection IEEE Electron Device Letters, v. 44, (9), September 2023, article number 10197584, p. 1408-1411 Chen, Tao; Zheng, Zheyang; Feng, Sirui; Zhang, Li; K. J. Chen
  • Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride Advanced Materials, v. 35, (12), March 2023, article number 2208960 Chen, Junting; Zhao, Junlei; Feng, Sirui; Zhang, Li; Cheng, Yan; Liao, Hang; Zheng, Zheyang; Chen, Xiaolong; Gao, Zhen; K. J. Chen; Hua, Mengyuan
  • Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT IEEE Electron Device Letters, v. 44, (12), December 2023, article number 10283932, p. 2015-2018 Sun, Jiahui; Mouhoubi, Samir; Silvestri, Marco; Zheng, Zheyang; Ng, Yat Hon; Shu, Ji; K. J. Chen; Curatola, Gilberto
  • Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT IEEE Electron Device Letters, v. 44, (11), November 2023, article number 10255635, p. 1813-1816 Cheng, Yan; Zheng, Zheyang; Ng, Yat Hon; K. J. Chen
  • Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors Applied Physics Letters, v. 123, (26), December 2023, article number 262107 Wang, Yingjie; Huang, Sen; Jiang, Qimeng; Wang, Xinhua; Ji, Zhongchen; Fan, Jie; Yin, Haibo; Wei, Ke; Liu, Xinyu; Sun, Qian; K. J. Chen
  • K. J. Chen, J. Zhao, S. Feng, L. Zhang, Y. Cheng, H. Liao, Z. Zheng, X. Chen, Z. Gao, K. J. Chen, M. Hua, “Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride,” Advanced Materials, v. 35, (12), March 2023, article number 2208960.
  • “Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors,” Applied Physics Letters, v. 123, (26), December 2023, article number 26210.
  • Y. Cheng, Y. -H. Ng, Z. Zheng, and K. J. Chen, “RF Enhancement-Mode p-GaN Gate HEMT on 200mm-Si Substrates,” IEEE Electron Device Letters, v. 44, (1), January 2023, article number 9941147, p. 29-31.
  • G. Lyu, J. Sun, J. Wei, K. J. Chen “Static and Dynamic Characteristics of a 1200-V/22 -mΩ Normally-Off SiC/GaN Cascode Device Built With Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT,” IEEE Transactions on Power Electronics, v, 38, (10), October 2023, article number 10184040, p. 12648-12658.

2022:

  • S. Feng, Z. Zheng, Y. Cheng, Y. H. Ng, W. Song T. Chen, L. Zhang, K. Liu, K. Cheng, and K. J. Chen, “Strain Release in GaN Epitaxy on 4o Off-Axis 4H-SiC,” Advanced Materials, 2022, 2201169.
  • H. Liao, Z. Zheng, T. Chen, L. Zhang, Y. Cheng, S. Feng, Y. H. Ng, L. Chen, L. Yuan, and K. J. Chen, “Normally-off p-GaN Gate Double-Channel HEMT with Suppressed Hot-Electron-Induced Dynamic On-Resistance Degradation,” IEEE Elec. Dev. Lett., vol. 43, no. 9, pp. 1424-1427, Sept. 2022.
  • Y. Cheng, J. He, H. Xu, K. Zhong, Z. Zheng, J. Sun, and K. J. Chen, “Gate Reliability of Schottky-Type p-GaN Gate HEMTs under AC Positive Gate Bias Stress With a Switching Drain Bias,” IEEE Elec. Dev. Lett., vol. 43, no. 9, pp. 1404-1407, Sept. 2022.
  • G. Lyu, J. Wei, W. Song, Z. Zheng, L. Zhang, J. Zhang, S. Feng, and K. J. Chen, “GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits,” IEEE Trans. on Elec. Dev., vol. 69, no. 8, pp. 4162-4169, Aug. 2022.
  • G. Lyu, J. Wei, T. Chen, J. Zhang, and K. J. Chen, “Substrate and Trench Design for GaN-on-EBUS Power IC Platform,” IEEE Trans. on Elec. Dev., vol. 69, no. 7, pp. 3641-3647, Jul. 2022.
  • T. Chen, Z. Zheng, S. Feng, L. Zhang, W. Song, and K. J. Chen, “GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping,” IEEE Elec. Dev. Lett., vol. 43, no. 5, pp. 697-700, May 2022.
  • Z. Zheng, T. Chen, L. Zhang, W. Song, and K. J. Chen, “Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform,” Appl. Phys. Lett., 120, 152102, 2022.
  • Y. Liao, T. Chen, J. Wang, W. Cai, Y. Ando, X. Yang, H.  Watanabe, A. Tanaka, S. Nitta, Y. Honda, K. J. Chen, and H. Amano, “Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process,” Appl. Phys. Lett., 120, 122109, 2022.

2021:

  • K. Zhong, Y. Wang, G. Lyu, J. Wei, J. Sun, and K. J. Chen, “650-V Normally-off GaN/SiC Cascode Device for Power Switching Applications,” IEEE Trans. on Industrial Electronics, vol. 69, no. 9, pp. 8997-9006, Sept. 2021.
  • S. Huang, X. Wang, X. Liu, Q. Sun, and K. J. Chen, “An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits,” Semiconductor Sci. and Tech., v. 36, no. 4, 044002, 2021.
  • L. Zhang, Z. Zheng, S. Yang, W. Song, S. Feng, and K. J. Chen, “Characterization of GaON as a Surface Reinforcement Layer of p-GaN in Schottky-type p-GaN Gate HEMTs,” Appl. Phys. Lett., 119, 053503, 2021.
  • K. Zhong, J. Wei, J. He, S. Feng, Y. Wang, S. Yang, K. J. Chen, “IG- and VGS-Dependent Dynamic Ron Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs,” IEEE Trans. on Industrial Electronics, vol. 69, no. 8, pp. 8387-8395, Aug. 2021.
  • Z. Zheng, H. Xu, L. Zhang, and K. J. Chen, “On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems,” Fundamental Research, 1, 661-671, 2021.
  • Z. Zheng, L. Zhang, W. Song, S. Feng, H. Xu, J. Sun, S. Yang, T. Chen, J. Wei, and K. J. Chen, “GaN Complementary Logic Integrated Circuits for Power Electronics,” Nature Electronics, 4， 595-603, 2021.
  • J. Sun, Z, Zheng, K. Zhong, G. Lyu, and K. J. CHEN, “Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices,” IEEE Transactions on Power Electronics, vol. 36, no. 11, pp. 12158-12162, Nov. 2021. 
  • Y. Wang, T. Chen, M. Hua, J. Wei, Z. Zheng, W. Song, S. Yang, K. Zhong and K. J Chen, “A Physics-Based Empirical Model of Dynamic IOFF under Switching Operation in p-GaN Gate Power HEMTs,” IEEE Transactions on Power Electronics, vo. 36, no. 9, pp. 9796-9805, Sept. 2021. 
  • W. Song, Z. Zheng, T. Chen, J. Wei, L. Yuan, and K. J. Chen, “RF Linearity Enhancement of GaN-on-Si HEMTs with a Closely Coupled Double-Channel Structure,” IEEE Elec. Dev. Lett., vol. 42, no. 8, pp. 1116-1119, Aug. 2021.
  • J. Chen, M. Hua, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, and K. J. Chen, “Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs,” IEEE Elec. Dev. Lett., vol. 42, no. 7, pp. 986-989, July 2021.
  • M. Hua, C. Wang, J. Chen, J. Zhao, S. Yang, L. Zhang, Z. Zheng, J. Wei, and K. J. Chen, “Gate Current Transport in Enhancement-mode p-n Junction/AlGaN/GaN (PNJ) HEMT,” IEEE Elec. Dev. Lett., vol. 42, no. 5, pp. 669-672, May 2021.
  • H. Xu, J. Wei, R. Xie, Z. Zheng, J. He, and K. J. Chen, “Incorporating the Dynamic Threshold Voltage into the SPICE Model of Schottky-type p-GaN Gate Power HEMTs,” IEEE Trans. Power Electronics, Vol. 36, No. 5, pp. 5904–5914, May 2021.
  • J. Wei, M. Zhang, G. Lyu, and K. J. Chen, “GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution” IEEE J. of Elec. Dev. Soc., vol. 9, no. 5, pp. 545-551, May 2021.
  • Y. Cheng, Y. Wang, S. Feng, Z. Zheng, T. Chen, G. Lyu, Y. H. Ng, and K. J. Chen, “Observation and Characterization of Impact ionization-induced OFF-state Breakdown in Schottky-type p-GaN Gate HEMTs,” Appl. Phys. Lett., 118, 163502, April 2021.
  • K. Zhong, H. Xu, Z. Zheng, J. Chen, and K. J. Chen, “Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching,” IEEE Elec. Dev. Lett., vol. 42, No. 4, pp. 501-504, April 2021.
  • H. Qiu, H. Liu, X. Jia, Z. Jiang, Y. Liu, J. Xu, T. Lu, M. Shao, T. -L. Ren, and K. J. Chen, “Compact, Flexible, and Transparent Antennas Based on Embedded Metallic Mesh for Wearable Devices in 5G Wireless Networks,” IEEE Trans. On Antennas and Propagation, vol. 69, no. 4, pp. 1864-1873, Apr. 2021.
  • S. Yang, Z. Zheng, L. Zhang, W. Song, and K. J. Chen, “GaN MIS-HEMTs with Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation,” IEEE Elec. Dev. Lett., vol. 42, No. 4, pp. 489-492, April 2021.
  • G. Lyu, Y. Wang, J. Wei, Z. Zheng, and K. J. Chen, “DV/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device,” IEEE Trans. Power Electronics, Vol. 36, No. 3, pp. 3312-3322, March 2021.
  • J. Wei, H. Xu, R. Xie, and K. J. Chen, “Principles and Impacts of Dynamic Threshold Voltage in a p-GaN gate High-Electron-Mobility Transistor,” Semi. Sci. and Tech., Vol. 36, No. 2, 024006, Feb. 2021.
  • Z. Zheng, W. Song, L. Zhang, S. Yang, J. Wei, and K. J. Chen, “Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters,” IEEE Elec. Dev. Lett., vol. 42, No. 1, pp. 26-29, Jan. 2021.
  • L. Zhang, Z. Zheng, S. Yang, W. Song, J. He, and K. J. Chen, “p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability,” IEEE Elec. Dev. Lett., vol. 42, No. 1, pp. 22-25, Jan. 2021.
  • Y. Zhang and K. J. Chen, “Overcoming the Limitation of Gallium Oxide Through Heterogeneous Integration,” Science China Physics, Mechanics & Astronomy, Vol. 64, 1, 217331, Jan. 2021.

2020:

  • Y. Wang, G. Lyu, J. Wei, Z. Zheng, J. He, J. Lei, and K. J. Chen, “Characterization of Static and Dynamic Behavior of 1200-V Normally-Off GaN/SiC Cascode Devices,” IEEE Trans. Ind. Elec., Vol. 67, No. 12, pp. 10284-10294, December 2020.
  • G. Lyu, Y. Wang, J. Wei, Z. Zheng, J. Sun, L. Zhang, and K. J. Chen, “A Normally-Off Co-Packaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications,” IEEE Trans. Power Electronics, Vol. 35, No. 9, pp. 9669-9679, September 2020.
  •  L. Zhu, Q. Zhou, X. Yang, J. Lei, K. Chen, Z. Luo, P. Huang, C. Zhou, K. J. Chen, “High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode with Al2O3 Gate Dielectric and In Situ Si3N4-Cap Passivation,” IEEE Transactions on Electron Devices, Vol. 67, No. 10. pp. 4136-4140, October 2020.
  • Z. Zheng, W. Song, J. Lei, Q. Qian, J. Wei, M. Hua, S. Yang, L. Zhang, and K. J. Chen, “GaN HEMT with Convergent Channel for Low Intrinsic Knee Voltage,” IEEE Elec. Dev. Lett., vol. 41, No. 9, pp. 1304-1307, September 2020.
  • J. Wei, M. Zhang, and K. J. Chen, “Superjunction J. He, J. Wei, Y. Li, Z. Zheng, S. Yang, B. Huang, and K. J. Chen, “Characterization and Analysis of Low-Temperature Time-To-Failure Behavior in Forward-biased Schottky-type p-GaN Gate HEMTs,” Appl. Phys. Lett., 116, 223502, 2020.
  • S. Yang, S. Huang, J. Wei, Z. Zheng, Y. Wang, J. He, and K. J. Chen, “Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy,” IEEE Elec. Dev. Lett., vol. 41, No. 5, pp. 685-688, April 2020.
  • S. Yang, Z. Tang, M. Hua, Z. Zhang, J. Wei, Y. Lu, and K. J. Chen, “Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges,” IEEE J. Elec. Dev. Soc., vol. 8, 2020.
  • C. Wang, M. Hua, J. Chen, S. Yang, Z. Zheng, J. Wei, L. Zhang, and K. J. Chen, “E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs,” IEEE Elec. Dev. Lett., vol. 41, No. 4, pp. 545-548, Apr. 2020. 
  • (Invited) J. Wei, G. Tang, R. Xie, and K. J. Chen, “GaN Power IC Technology on p-GaN Gate HEMT Platform,” Japanese Journal of Applied Physics, 59, SG0801, 2020.
  • J. Sun, S. Yang, H. Xu, L. Zhang, X. Wu, K. Sheng, and K. J. Chen, “High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique,” IEEE J. Emerging and Selected Topics in Power Electronics, vol. 8, pp. 215-222, Mar. 2020.
  •  L. Zhang, J. Wei, Z. Zheng, W. Song, S. Yang, X. Han, and K. J. Chen, “p-GaN Gate Power Transistor with Distributed Built-in Schottky Barrier Diode for Low-Loss Reverse Conduction,” IEEE Elec. Dev. Lett., vol. 41, No. 3, pp. 341-344, Mar. 2020.
  • Z. Zheng, W. Song, L. Zhang, S. Yang, J. Wei, and K. J. Chen, “High Ion and Ion/Ioff Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform,” IEEE Elec. Dev. Lett., vol. 67, (1), pp. 217-223, Jan. 2020.
  • M. Hua, S. Yang, J. Wei, Z. Zheng, J. He, and K. J. Chen, “Hole-Induced Degradation in E-mode GaN MIS-FETs: Impact of Substrate Terminations,” IEEE Transactions on Electron Devices, Vol. 67, No. 1, pp. 217-223, Jan. 2020.

2019:

  • S. Huang, X. Wang, X. Liu, R. Zhao, W. Shi, Y. Zhang, J. Fan, H. Yin, K. Wei, Y. Zheng, J. Shi, X. Wang, W. Wang, Q. Sun, and K. J. Chen, “Capture and Emission Mechanisms of Defect States at Interface Between Nitride Semiconductor and Gate Oxides in GaN-based Metal-oxide-semiconductor Power Transistors,” J. Appl. Phys., 126, 164505, 2019.
  • J. Sun, J. Wei, Z. Zheng, Y. Wang, and K. J. Chen, “Short Circuit Capability and Short Circuit Induced Vth Instability of a 1.2 kV SiC Power MOSFET,” IEEE J. Emerging and Selected Topics in Power Electronics, vol. 7, pp. 1539-1546, Sep. 2019.
  • Y. Wang, G. Lyu, J. Wei, Z. Zheng, J. Lei, W. Song, L. Zhang, M. Hua, and K. J. Chen, “A 1200-V GaN/SiC Cascode Device with E-mode p-GaN gate HEMT and D-mode SiC Junction Field-Effect Transistor,” Appl. Phys. Exp., 12, 106505, 2019.
  • Y. Wang, J. Wei, S. Yang, J. Lei, M. Hua, and K. J. Chen, “Investigation of Dynamic Ioff Under Swtiching Operation in Schottky-type p-GaN Gate HEMTs,” IEEE Trans. Elec. Dev., vol. 66, pp. 3789-3794, 2019.
  • Q, Qian, J. Lei, J. Wei, Z. Zhang, G. Tang, K. Zhong, Z. Zheng, and K. J. Chen, “2D Materials as Semiconducting Gate for Field-Effect Transistors with Inherent Over-Voltage Protection and Boosted ON-Current,” npj 2D Materials and Applications, vol. 3, (1), 24. 2019.
  • T. Masahiro, A. Tanaka, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, K. Shima, K. Kojima, S. Chichibu, F. Shigefusa, K. J. Chen, and H. Amano, “Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature,” Phys. Stat. Sol. (B), 1900554, 2019.
  • L. Zhang, J. Zhu, S. Cao, J. Ma, A. Li, J. Wei, G. Lyu, S. Li, S. Li, J. Wei, W. Wu, W. Sun, and K. J. Chen, “Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs,” IEEE Electron Device Lett., vol. 40, no. 10, pp. 1658-1661, Oct. 2019.
  • J. Wei, M. Zhang, H. Jiang, X. Zhou, B. Li, and K. J. Chen, “Superjunction MOSFET with Dual Built-in Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study,” IEEE Electron Device Letters, v. 40, (7), pp. 1155-1158, 2019.
  • J. Wei, M. Zhang, H. Jiang, B. Li, and K. J. Chen, “Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect,” IEEE Trans. Elec. Dev., vol. 66, No. 7, pp. 3034-3039, Jul. 2019.
  • J. Lei, J. Wei, G. Tang, Q. Qian, Z. Zhang, M. Hua, Z. Zheng, and K. J. Chen, “Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor with Interdigital Built-in Schottky Barrier Diode,” IEEE Trans. Elec. Dev., vol. 66, No. 5, pp. 2107-2112, May, 2019.
  • M. Hua, X. Cai, S. Yang, Z. Zhang, N. Wang, and K. J. Chen, “Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride,” ACS Applied Electronic Materials, 1, pp. 642-648, Apr. 2019.
  • J. Wei, R. Xie, H. Xu, H. Wang, Y. Wang, M. Hua, K. Zhong, G. Tang, J. He, M. Zhang, and K. J. Chen, “Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p-GaN Gate HEMTs,” IEEE Electron Device Lett., vol. 40, no. 4, pp. 526-528, Apr. 2019.
  • R. Xie, X. Yang, G. Xu, J. Wei, Y. Wang, H. Wang, M. Tian, F. Zhang, W. Chen, L. Wang, and K. J. Chen, “Switching Transient Analysis for Normally-off GaN Transistor with p-GaN Gate in a Phase-Leg Circuit,” IEEE Trans. on Power Electronics, vol. 34, No. 4, pp. 3711-3728, Apr. 2019.
  • S. Huang, X. Wang, X. Liu, Y. Wang, J. Fan, S. Yang, H. Yin, K. Wei, W. Wang, H. Gao, Y. Zhou, Q. Sun, and K. J. Chen, “Monolithic Integration of E/D-mode GaN MIS-HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructure on Si Substrates,” Appl. Phys. Exp., v. 12, (2), 024001, 2019.
  • X. Cai, M. Hua, Z. Zhang, S. Yang, Z. Zheng, Y. Cai, K. J. Chen, and N. Wang, “Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel,” Applied Physics Lett., v. 114, (5), 053109, Feb. 2019.
  • M. Zhang, J. Wei, X. Zhou, H. Jiang, B. Li, and K. J. Chen, “Simulation Study of a Power MOSFET with Built-in Channel Diode for Enhanced Reverse Recovery Performance,” IEEE Electron Device Lett., vol. 40, no. 1, pp. 79-82, Jan. 2019.

2018:

  • M. Hua, J. Wei, Q. Bao, Z. Zheng, Z. Zhang, J. He, and K. J. Chen, “Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-mode GaN MIS-FET,” IEEE Trans. Elec. Dev., vol. 65, pp. 3831-3838, 2018.
  • J. He, M. Hua, Z. Zhang, and K. J. Chen, “Performance and Vth Stability in E-mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack,” IEEE Trans. Elec. Dev., vol. 65, pp. 3185-3191, 2018.
  • J. He, G. Tang, and K. J. Chen, “Vth Instability of p-GaN gate HEMT under static and dynamic gate stress,” IEEE Elec. Dev. Lett., vol. 39, pp. 1576-1579, 2018.
  • Q. Qian, Z. Zhang, and K. J. Chen, “Layer-dependent second-order Raman intensity of MoS2 and WSe2: influence of intervalley scattering,” Physical Review B, 97, 165409, 2018.
  • Y. Wang, M. Hua, G. Tang, J. Lei, Z. Zheng, J. Wei, and K. J. Chen, “Dynamic OFF-state Current (Dynamic Ioff) in p-GaN Gate HEMTs with an Ohmic Gate Contact,” IEEE Elec. Dev. Lett., vol. 39, pp. 413-416, 2018.
  • J. Wei, M. Zhang, B. Li, X. Tang, and K. J. Chen, “An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-off GaN Double-Channel MOS-HEMT,” IEEE Trans. Elec. Dev., vol. 65, pp. 2757-2764, 2018.
  • Z. Zhang, M. Hua, J. He, G. tang, Q. Qian, and K. J. Chen, “Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface,” Appl. Phys. Exp., v. 11, (8), 081003, 2018.
  • Z. Zhang, Q. Qian, B. Li, and K. J. Chen, “Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment,” ACS Appl. Mater. Interfaces, v. 10, pp. 17419-17426, 2018.
  • X. Tang, B. Li, K. J. Chen, and J. Wang, “Photocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation,” Appl. Phys. Express, 11, 054101, 2018.
  • Q. Qian, Z. Zhang, and K. J. Chen, “Layer-dependent second-order Raman intensity of MoS2 and WSe2: influence of intervalley scattering,” Physical Review B, 97, 165409, 2018.
  • (Invited Paper) H. Amano, et al., “The 2018 GaN power electronics roadmap, ” J. Phys. D: Appl. Phys. 51 (2018) 163001.
  • Q. Qian, Z. Zhang, and K. J. Chen, “In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study,” Langmuir, 34, pp. 2882-2889, 2018. DOI: 10.1021/acs.langmuir.7b03840.
  • M. Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang, and K. J. Chen, “Bias Temperature Instability of Normally-Off GaN MIS-FET with Low-Pressure Chemical Vapor Deposition SiNx Gate Dielectric, ” Phys. Status Solidi A, 2018, 1700641, DOI: 10.1002/pssa.201700641.
  • J. Lei, J. Wei, G. Tang, Z. Zhang, Q. Qian, Z. Zheng, Mengyuan, and K. J. Chen, “650-V Double-Channel Lateral Schottky Barrier Diode with Dual-Recess Gated Anode,” IEEE Electron Device Lett., IEEE Electron Device Lett., vol. 39, no. 2, pp. 260-263, Feb. 2018.
  • M. Hua, J. Wei, Q. Bao, Z. Zhang, Z. Zheng, and K. J. Chen, “Dependence of VTH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET,” IEEE Electron Device Lett., vol. 39, No. 3, pp. 413-416, 2018, DOI: 10.1109/LED.2018.2791664.
  • S. Huang, X. Liu, X. Wang, X. Kang, J. Zhang, J. Fan, J. Shi, K. Wei, Y. Zheng, H. Gao, Q. Sun, M. Wang, B. Shen, and K. J. Chen, “Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices,” IEEE Trans. Electron Devices, vol. 65, no. 1, pp. 207-214, 2018.
  • J. Wei, J. Lei, X. Tang, B. Li, S. Liu, and K. J. Chen, “Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT,” IEEE Electron Device Lett., vol. 39, no. 1, pp. 59-62, 2018.
  • K. Kim, M. Hua, D. Liu, J. Kim, K. J. Chen, and Z. Ma, “Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3,” Nano Energy, 43 (2018) 259-269.

2017:

  • S. Yang, C. Zhou, S. Han, J. Wei, K. Sheng, and K. J. Chen, “Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices,” IEEE Trans. Electron Devices, vol. 64, no. 12, pp. 5048-5056, 2017.
  • Q. Qian, Z. Zhang, M. Hua, J. Wei, J. Lei, and K. J. Chen, “Remote N2 Plasma Treatment to Deposit Ultrathin High-k Dielectric As Tunneling Contact Layer for Single-layer MoS2 MOSFET,” Appl. Phys. Express, vol. 10, p. 125201, 2017.
  • Z. Zhang, B. Li, Member, Q. Qian, X. Tang, M. Hua, B. Huang, and K. J. Chen, “Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy,” IEEE Trans. Electron Devices, vol. 64, No. 10, p. 4036-4036, 2017.
  • G. Tang, A. M. H. Kwan, R. K. Y. Wong, J. Lei, R. Y. Su, F. W. Yao, Y. M. Lin, J. L. Yu, T. Tsai, H. C. Tuan, A. Kalnitsky, and K. J. Chen, “Digital Integrated Circuits on an E-mode GaN Power HEMT Platform,” IEEE Elec. Dev. Lett., vol. 38, No. 9, pp. 1282-1285, 2017.
  • S. Liu, M. Wang, M. Tao, R. Yin, J. Gao, H. Sun, W. Lin, C. P. Wen, J. Wang, W. Wu, Y. Hao, Z. Zhang, K. J. Chen, and B. Shen, “Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers,” IEEE Elec. Dev. Lett.,vol. 38, No. 8, pp. 1075-1078, 2017.
  • G. Tang, J. Wei, Z. Zhang, X. Tang, M. Hua, H. Wang, and K. J. Chen, “Dynamic RON of GaN-on-Si Lateral Power Devices with a Floating Substrate Termination,” IEEE Elec. Dev. Lett., vol. 38, No. 7, pp. 937-940, 2017.
  • M. Hua, J. Wei, G. Tang, Z. Zhang, Q. Qian, X. Cai, N. Wang, and K. J. Chen, “Normally-Off LPCVD-SiNx/GaN MIS-FET with Crystalline Oxidation Interlayer,” IEEE Elec. Dev. Lett., vol. 7, No. 38, pp. 929-932, 2017.
  • M. Zhang, J. Wei, H. Jiang, K. J. Chen, and C. H. Cheng, “A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance,” IEEE Trans. Device and Materials Reliability, vol. 17, No. 2,  pp. 432-437, 2017.
  • M. Zhang, J. Wei, H. Jiang, K. J. Chen, and C. Cheng, “SiC trench MOSFET with self-biased p-shield for low RON-SP and low OFF-state oxide field,” IET Power Electron., vol. 10, no. 10, No. 10, pp. 1208-1213, 2017.
  • J. Wei, M. Zhang, H. Jiang, H. Wang, and K. J. Chen, “Dynamic Degradation in SiC Trench MOSFET with a Floating p-Shield Revealed With Numerical Simulations,” IEEE Trans. Electron Devices, vol. 64, No. 6, pp. 2592-2598, 2017.
  • Q. Qian, Z. Zhang, M. Hua, G. Tang, J. Lei, F. Lan, Y. Xu, R. Yan, and K. J. Chen, “Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment,” Nanotechnology, vol. 28, No. 17, p. 175202, 2017.
  • (Invited Paper) K. J. Chen, O. Häberlen, A. Lidow, C. L. Tsai, T. Ueda, Y. Uemoto, and Y. Wu, “GaN-on-Si Power Technology: Devices and Applications,” IEEE Trans. Electron Devices, vol. 64, No. 3, pp. 779-795, 2017.
  • R. Xie, H. Wang, G. Tang, X. Yang, and K. J. Chen, “An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration,” IEEE Trans. Power Electronics, vol. 32, No. 8, pp. 6416-6488, 2017.
  • H. Wang, J. Wei, R. Xie, C. Liu, G. Tang, and K. J. Chen, “Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Degradation and Circuit Design Considerations,” IEEE Trans. Power Electronics, vol. 32, No. 7, pp. 5539-5549, 2017.
  • S. Yang, S. Liu, Y. Lu, and K. J. Chen, “Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques,” physica status solidi (a), vol. 214, p. 1600607, 2017.

2016:

  • S. Huang, X. Liu, X. Wang, X. Kang, J. Zhang, Q. Bao, K. Wei, Y. Zheng, C. Zhao, H. Gao, Q. Sun, Z. Zhang, and K. J. Chen, “High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure,” IEEE Elec. Dev. Lett., vol. 37, No. 12, pp. 1617-1620, 2016.
  • B. Li, X. Tang, G. Tang, J. Wei, J. Wang, and K. J. Chen, “Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform,” IEEE Photonics Technology Lett., vol. 28, pp. 2803-2806, 2016.
  • J. Wei, M. Zhang, H. Jiang, C. Cheng, and K. J. Chen, “Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges,” IEEE Elec. Dev. Lett., vol. 37, pp. 1458-1461, 2016.
  • X. Tang, B. Li, Z. Zhang, G. Tang, J. Wei, and K. J. Chen, “Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic Drain,” IEEE Trans. Electron Devices, vol. 63, pp. 2831-2837, 2016.
  • Q. Qian, B. Li, M. Hua, Z. Zhang, F. Lan, Y. Xu, R. Yan, and K. J. Chen, “Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer,” Scientific Reports, vol. 6, p. 27676, 2016.
  • J. Wei, H. Jiang, Q. Jiang, and K. J. Chen, “Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications,” IEEE Trans. Electron Devices, vol. 63, pp. 2469-2473, 2016.
  • (Feature Article) K. J. Chen, S. Yang, S. Liu, C. Liu, and M. Hua, “Toward reliable MIS- and MOS-gate structures for GaN lateral power devices,” Phys. Status Solidi A, vol. 213, pp. 861-867, 2016.
  • M. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, “Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT,” IEEE Elec. Dev. Lett., vol. 37, No. 3, pp. 265-268, 2016.
  • (Invited Article) B. Li, X. Tang, J. Wang, and K. J. Chen, “Optoelectronic Devices on AlGaN/GaN HEMT Platform, ” Phys. Status Solidi A, vol. 213, No. 5, pp. 1213-1221, 2016.
  • X. Tang, B. Li, Y. Lu, and K. J. Chen, “On-chip Addressable Schottky-on-Heterojunction Light-Emitting Diode Arrays on AlGaN/GaN-on-Si Platform, ” Phys. Status Solidi C, vol. 13, No. 5-6, pp. 365-368, 2016.
  • S. Yang, Y. Lu, H. Wang, S. Liu, C. Liu, and K. J. Chen, “Dynamic Gate Stress-Induced VTH Shift and Its Impact on Dynamic RON in GaN MIS-HEMTs,” IEEE Elec. Dev. Lett., vol. 37, pp. 157-160, 2016.
  • S. Yang, S. Liu, C. Liu, M. Hua, and K. J. Chen, “Gate Stack Engineering for GaN Lateral Power Transistors, ” Semicond. Sci. Technol. 31, 024001, 2016.

2015:

  • J. Wei, S. Liu, B. Li, X. Tang, Y. Lu, C. Liu, M. Hua, Z. Zhang, G. Tang, and K. J. Chen, “Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor, ” IEEE Elec. Dev. Lett., vol. 36, No. 12, pp. 1287-1290, 2015.
  • M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, “Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs, ” IEEE Trans. Electron Devices, vol. 62, No. 10, pp. 3215-3222, 2015.
  • X. Wang, J. Xu, Z. Wang, K. J. Chen, X. Wu, Z. Wang, P. Yang, and L. H. K. Duong, “An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators, ” IEEE Trans. Computer-Aided Design Of Integrated Circuits And Systems, vol. 34, No. 9, pp. 1401-1414, 2015.
  • C. Zhang, M. Wang, B. Xie, C. P. Wen, J. Wang, Y. Hao, W. Wu, K. J. Chen, and B. Shen, “Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate, ” IEEE Trans. Electron Devices, vol. 62, NO. 8, pp. 2475-2480, 2015.
  • H. Wang, C. Liu, Q. Jiang, Z. Tang, and K. J. Chen, “Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors Under Hard Switching Operation, ” IEEE Elec. Dev. Lett., vol. 36, No. 8, pp. 760-762, 2015.
  • S. Lin, M. Wang, B. Xie, C. P. Wen, M. Yu, J. Wang, Y. Hao, W. Wu, S. Huang, K. J. Chen, and B. Shen, “Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment, ” IEEE Elec. Dev. Lett., vol. 36, No. 8, pp. 757-759, 2015.
  • S. Huang, X. Liu, J. Zhang, K. Wei, G. Liu, X. Wang, Y. Zheng, H. Liu, Z. Jin, C. Zhao, C. Liu, S. Liu, S. Yang, J. Zhang, Y. Hao, and K. J. Chen, “High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique, ” IEEE Elec. Dev. Lett., vol. 36, No. 8, pp. 754-756, 2015.
  • S. Yang, S. Liu, Y. Lu, C. Liu, and K. J. Chen, “AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs, ” IEEE Trans. Electron Devices, vol. 62, No. 6, pp. 1870-1878, 2015.
  • Y. Lu, Q. Jiang, Z. Tang, S. Yang, C. Liu, and K. J. Chen, “Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition, ” Appl. Phys. Express 8, 064101, 2015.
  • H. Wang, A. M. Kwan, Q. Jiang, and K. J. Chen, “A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters, ” IEEE Trans. on Electron Devices, vol. 62, No. 4, pp. 1143-1149, 2015.
  • B. Li, X. Tang, and K. J. Chen, “Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode, ” Appl. Phys. Lett., 106(9), 093505, 2015.
  • M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, “GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low Pressure Chemical Vapor Deposition Silicon Nitride (LPCVD-SiNx) as Gate Dielectric,” IEEE Elec. Dev. Lett., vol. 36, No. 5, pp. 448-450, 2015.
  • Y. Lu, B. Li, X. Tang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Normally OFF Al2O3-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation, ” IEEE Trans. Electron Devices, vol. 62, No. 3, pp. 821-827, 2015.
  • S. Liu, S. Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, B. Shen, and K. J. Chen, “Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer, ” Appl. Phys. Lett., 106(5), 051605, 2015.
  • C. Liu, S. Yang, S. Liu, Z. Tang, H. Wang, Q. Jiang, and K. J. Chen, “Thermally Stable Enhancement-Mode GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier, ” IEEE Elec. Dev. Lett., vol. 36, No. 4, pp. 318-320, 2015.
  • S. Huang, X. Liu, K. Wei, G. Liu, X. Wang, B. Sun, X. Yang, B. Shen, C. Liu, S. Liu, M. Hua, S. Yang, and K. J. Chen, “O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors, ” Appl. Phys. Lett., 106(3), 033507, 2015.

2014:

  • S. Yang, S. Liu, C. Liu, Y. Lu, and K. J. Chen, “Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors,” Appl. Phys. Lett., 105(22), 223508, 2014.
  • (Invited) K. J. Chen, S. Yang, Z. Tang, S. Huang, Y. Lu, Q. Jiang, S. Liu, C. Liu, and B. Li, “Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs, ” Phys. Stat. Sol. (a), vol. 212, No. 5, pp. 1059-1065, 2015.
  • Q. Jiang, Z. Tang, C. Zhou, S. Yang, and K. J. Chen, “Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform,” IEEE Trans. on Electron Devices, vol. 61, No. 11, pp. 3808-3813, 2014.
  • A. M. Kwan, Y. Guan, X. Liu, and K. J. Chen, “A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform,” IEEE Trans. on Electron Devices, vol. 61, No. 8, pp. 2970-2976, 2014.
  • Z. Tang, S. Huang, X. Tang, B. Li, and K. J. Chen, “Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs,” IEEE Trans. on Electron Devices, vol. 61, No. 8, pp. 2785-2792, 2014.
  • B. Li, X. Tang, J. Wang, and K. J. Chen, “P-doping-free III-nitride high electron mobility light-emitting diodes and transistors,” Appl. Phys. Lett., 105(3), 032105, 2014.
  • S. Liu, S. Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and K. J. Chen, “Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer,” IEEE Elec. Dev. Lett., vol. 35, No. 7, pp. 723-725, 2014.
  • M. Wang, Y. Wang, C. Zhang, B. Xie, C. P. Wen, J. Wang, Y. Hao, W. Wu, K. J. Chen, and B. Shen, “900 V/1.6 mΩ.cm2 Normally Off Al2O3/GaN MOSFET on Silicon Substrate,” IEEE Trans. on Electron Devices, vol. 61, No. 6, pp. 2035-2040, 2014.
  • Q. Jiang, Z. Tang, C. Liu, Y. Lu, and K. J. Chen, “A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs, ” IEEE Trans. on Electron Devices, vol. 61, No. 3, pp. 762-768, 2014.
  • A. Zhang, L. Zhang, Z. Tang, X. Cheng, Y. Wang, K. J, Chen, and M. Chan, “Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components, ” IEEE Trans. on Electron Devices, vol. 61, No. 3, pp. 755-761, 2014.
  • S. Huang, K. Wei, G. Liu, Y. Zheng, X. Wang, L. Pang, X. Kong, X. Liu, Z. Tang, S. Yang, Q. Jiang, and K. J. Chen, “High- fMAX High Johnson’s Figure-of-Merit 0.2-um Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx Passivation, ” IEEE Elec. Dev. Lett., vol. 35, No. 3, pp. 315-317, 2014.
  • C. Liu, S. Liu, S. Huang, B. Li, and K. J. Chen, “AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film,” Physica Status Solidi (C), vol. 11, No. 3-4, pp. 953-956, 2014
  • B. Li, Q. Jiang, S. Liu, C. Liu, and K. J. Chen, “Degradation of transient OFF-state leakage current in AlGaN/GaN HEMTs induced by ON-state gate overdrive,” Physica Status Solidi (C), vol. 11, No. 3-4, pp. 928-931, 2014.
  • S. Yang, Q. Jiang, B. Li, Z. Tang, and K. J. Chen, “GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures, ” Physica Status Solidi (C), vol. 11 No. 3-4, pp. 949-952, 2014.
  • (Invited) K. J. Chen, A. M. H. Kwan, and Q. Jiang, “Technology for III-N heterogeneous mixed-signal electronics,” Physica Status Solidi (a), vol. 211, No. 4, pp. 769-774, 2014.
  • S. Yang, C. Zhou, Q. Jiang, J. Lu, B. Huang, and K. J. Chen, “Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement,” Appl. Phys. Lett., 104(1), 013504, 2014.
  • Q. Zhou, S. Yang, W. Chen, B. Zhang, Z. Feng, S. Cai, and K. J. Chen, “High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications,” Solid-State Electronics, vol. 91, pp. 19-23, 2014.

2013:

  • S. Yang, Z. Tang, K. -Y. Wong, Y. -S. Lin, C. Liu, Y. Lu, S. Huang, and K. J. Chen, “High-quality interface in Al2O3/GaN/AlGaN/GaN MIS Structures within situ pre-gate plasma nitridation,” IEEE Elec. Dev. Lett., vol. 34, No. 12, pp. 1497-1499, 2013.
  • Z. Tang, Q. Jiang, Y. Lu, S. Huang, S. Yang, X. Tang, and K. J. Chen, “600-V normally-off SiNx/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse,” IEEE Elec. Dev. Lett., vol. 34, No. 11, pp. 1373-1375, 2013.
  • Y. Wang, M. Wang, B. Xie, C. P. Wen, J. Wang, Y. Hao, W. Wu, K. J. Chen, and B. Shen, “High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique,” IEEE Elec. Dev. Lett., vol. 34, No. 11, pp. 1370-1372, 2013.
  • Q. Zhou, W. Chen, C. Zhou, B. Zhang, and K. J. Chen, “High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection,” Electronics Lett., vol. 49, No. 22, 2013.
  • S. Huang, K. Wei, Z. Tang, S. Yang, C. Liu, L. Guo, B. Shen, J. Zhang, X. Kong, G. Liu, Y. Zheng, X. Liu, and K. J. Chen, “Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation,” J. Appl. Phys., 114, 144509, 2013.
  • S. Yang, S. Huang, Q. Zhou, M. Schnee, Q.-T. Zhao, J. Schubert, and K. J. Chen, “Fabrication and characterization of enhancement-mode high-K LaLuO3-AlGaN/GaN MIS-HEMTs,” IEEE Trans. on Electron Devices, vol. 60, No. 10, pp. 3040-3046, 2013.
  • Y. Lu, S. Yang, Q. Jiang, Z. Tang, B. Li, and K. J. Chen, “Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs,” Phys. Sta. Sol. (C), 10, No. 11, pp. 1397-1400, 2013.
  • C. Liu, S. Liu, S. Huang, and K. J. Chen, “Plasma-enhanced atomic layer deposition of AlN epitaxial thin film for AlN/GaN heterostructure TFTs,” IEEE Elec. Dev. Lett., vol. 34, No. 9, pp. 1106-1108, 2013.
  • A. M. H. Kwan, Y. Guan, X. Liu, and K. J. Chen, “Integrated over-temperature protection circuit for GaN smart power ICs,” Jpn. J. Appl. Phys., 52, 08JN15, 2013.
  • S. Yang, S. Huang, Q. Zhou, M. Schnee, Q.-T. Zhao, J. Schubert, and K. J. Chen, “Enhancement-mode LaLuO3-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility-Transistors using fluorine plasma ion implantation,” Jpn. J. Appl. Phys., 52, 08JN02, 2013.
  • (Invited) K. J. Chen, and S. Huang, “AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers,” Semiconductor Science and Technology, vol. 28, No. 7, 074015, 2013.
  • X. Liu, C. Zhan, K. W. Chan, MHS. Owen, W. Liu, D. Z. Chi, L. S. Tan, K. J. Chen, and Y. C. Yeo, “AlGaN/GaN metal-oxide-semiconductor high-electron-mobility-transistors with a high breakdown voltage of 1400 V and a complementary metal-oxide-semiconductor compatible gold-free process,” Jpn. J. Appl. Phys., 52, 04CF06, 2013.
  • Q. Zhou, W. Chen, S. Liu, B. Zhang, Z. Feng, S. Cai, and K. J. Chen, “Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement,” IEEE Trans. on Electron Devices, vol. 60, No. 3, pp. 1075-1081, 2013.
  • Z. Tang, S. Huang, Q. Jiang, S. Liu, C. Liu, and K. J. Chen, “High-voltage (600V) low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx passivation,” IEEE Elec. Dev. Lett., vol. 34, No. 3, pp. 366-368, 2013.
  • Q. Jiang, C. Liu, Y. Lu, and K. J. Chen, “1.4 kV AlGaN/GaN HEMTs on a GaN-on-SOI platform,” IEEE Elec. Dev. Lett., vol. 34, No. 3, pp. 357-359, 2013.
  • S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: compensation of interface traps by polarization charges,” IEEE Elec. Dev. Lett., vol. 34, No. 2, pp. 193-195, 2013.
  • A. W. H. Kwan and K. J. Chen, “A gate overdrive protection technique for improved reliability in AlGaN/GaN enhancement-mode HEMTs,” IEEE Elec. Dev. Lett., vol. 34, No. 1, pp. 30-32, 2013.
  • W. Chen, J. Zhang, Z. Wang, J. Wei, B. Zhang, and K. J. Chen, “Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier,” Semicond. Sci. Technol., vol. 28, 015021, 2013.
  • Z. Dong, S. Tan, Y. Cai, H. Chen, S. Liu, J. Xu, L. Xue, G. Yu, Y. Wang, D. Zhao, K. Hou, K. J. Chen, and B. Zhang, “5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing,” Electronics Letters, vol. 49, No. 3, pp. 221-222, 2013.

2012:

  • X. Wang, S. Liu, D. Ma, X. Zheng, G. Chen, F. Xu, N. Tang, B. Shen, P. Zhang, X. Caom, B. Wang, S. Huang, K. J. Chen, S. Zhou, and A. Yoshikawa, “Fe-doped InN layers grown by molecular beam epitaxy,” Appl. Phys. Lett., 101, 171905, 2012.
  • J. Fu, L. Yuan, and L. Yobas, and K. J. Chen, “UV-illuminated Dielectrophoresis by Two-Dimensional Electron Gas (2DEG) in AlGaN/GaN Heterojunction,” Phys. Stat. Sol. (a), 28042, 2012.
  • Zhou, Q. Jiang, S. Huang, and K. J. Chen, “Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices,” IEEE Elec. Dev. Lett., 2012, vol. 33, No. 8, pp. 1132-1134, 2012.
  • S. Yang, S. Huang, H. Chen, C. Zhou, Q. Zhou, M. Schnee, Q.-T. Zhao, J. Schubert, and K. J. Chen, “AlGaN/GaN MISHEMTs with High-K LaLuO3 Gate Dielectric,” IEEE Elec. Dev. Lett., 2012, vol. 33, No. 7, pp. 979-981, 2012.
  • X. Liu, C. Zhan, K. W. Chan, W. Liu, L. S. Tan, K. J. Chen and Y.-C. Yeo, “AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm2 using a CMOS-Compatible Gold-Free Process,” Appl. Phys. Express, 5, 066501, 2012.
  • S. Huang, Q. Jiang, S. Yang, C. Zhou, and K. J. Chen, “Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film, ” IEEE Elec. Dev. Lett., vol. 33, No. 4, pp. 516-518, 2012.
  • S. Liu, Y. Cai, G. Gu, J. Wang, C. Zeng, W. Shi, Z. Feng, H. Qin, Z. Cheng, K. J. Chen, and B. Zhang, “Enhancement-mode operation of nano-channel Array (NCA) AlGaN/GaN HEMTs,” IEEE Elec. Dev. Lett., vol. 33, No. 3, pp. 354-356, 2012.
  • H. Chen, L. Yuan, Q. Zhou, C. Zhou, and K. J. Chen, “Normally-off AlGaN/GaN power tunnel-junction FETs,” Phys. Stat. Sol. C, No. 3-4, pp. 871-874, 2012.
  • S. Huang, S. Yang, J. Roberts, and K. J. Chen, “Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement,” Phys. Stat. Sol. C, No. 3-4, pp. 923-926, 2012.
  • Q. Zhou, H. Chen, C. Zhou, Z. H. Feng, S. J. Cai, and K. J. Chen, “Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage,” IEEE Elec. Dev. Lett., vol. 33, No. 1, pp. 38-40, 2012.
  • J. -Y. Lu, H. Ren, D. Deng, Y. Wang, K. J. Chen, K. M. Lau, and T. Y. Zhang, “Thermally activated pop-in and indentation size effects in GaN films,” J. Phys. D: Appl. Phys. 45 (2012) 085301.
  • S. Jha, H. E. Wang, O. Kutsay, E.V. Jelenkovic, K. J. Chen, I. Bello, V. Kremnican, J. A. Zapien, “Exploiting nanostructure-thin film interfaces in advanced sensor device configurations”, Vacuum, vol. 86, pp. 757-760, 2012.

2011:

  • C. Ma, H. Chen, C. Zhou, S. Huang, L. Yuan, J. Roberts, and K. J. Chen,”ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors,” J. Appl. Phys., 110, 114514, 2011. 
  • S. Huang, S. Yang, J. Roberts, and K. J. Chen, “Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors,” Jpn. J. Appl. Phys., 50, 110202, 2011.
  • S. Yang, S. Huang, H. Chen, M. Schnee, Q.-T. Zhao, J. Schubert, and K. J. Chen, “Characterization of high-k LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition,” Appl. Phys. Lett., 99, 182103, 2011.
  • L. Yuan, H. Chen, Q. Zhou, C. Zhou, and K. J. Chen, “Gate-induced Schottky barrier lowering effect in AlGaN/GaN metal-2DEG tunnel junction field effect transistor,” IEEE Elec. Dev. Lett., vol. 32, No. 9, pp. 1221-1223, 2011.
  • B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode,” Appl. Phys. Lett., 99, 062101, 2011.
  • H. Chen, M. J. Wang, and K. J. Chen, “Enhancement-mode AlGaN/GaN HEMTs fabricated by standard fluorine ion implantation with a Si3N4 energy-absorbing layer,” Electrochem. Solid-State Lett. vol. 14, No. 6, pp. H229-231, 2011.
  • A. M. H. Kwan, K. -Y. Wong, Xiaosen Liu, and K. J. Chen, “High-gain and high-bandwidth AlGaN/GaN high electron mobility transistor comparator with high-temperature operation,” Jpn, J. Appl. Phys. Vol. 50, No. 4, 2011.
  • M. J. Wang and K. J. Chen, “Kink effect in AlGaN/GaN HEMTs induced by drain and gate pumping,” IEEE Electron Device Letters, vol. 32, No. 4, pp. 482-484, Apr. 2011.
  • H. Zhang, S. Bowman, and K. J. Chen, “Efficient parameter extraction of microwave coupled-resonator filter using genetic algorithms,” Int. J. of RF and Microwave Computer-Aided Engineering, vol. 21, No. 2, pp. 137-144, Mar. 2011.
  • J. -Y. Lu, D. Deng, Y. Wang, K. J. Chen, K. M. Lau, and T. Y. Zhang, “Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation,” AIP Advances, 1 (2011) 032132.
  • L. Yuan, H. Chen, and K. J. Chen, “Normally-off AlGaN/GaN metal-2DEG tunnel-junction field-effect transistors,” IEEE Electron Device Letters, vol. 32, No. 3, pp. 303-305, 2011.
  • J. Fu and K. J. Chen, “Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes” Phys. Sta. Sol. (c), 8, No. 7-8, pp. 2479-2482, 2011.
  • S. Huang, H. Chen, and K. J. Chen, “Surface properties of AlGaN/GaN heterostructures treated by fluorine plasma: an XPS study,” Phys. Status Solidi C, 8, No. 7-8, pp. 2200-2203, 2011.
  • M. J. Wang and K. J. Chen, “Improvement of the Off-State Breakdown Voltage with Fluorine Ion Implantation in AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices, vol. 58, No. 2, pp. 460-465. 2011.
  • X. Liu and K. J. Chen, “GaN Single-Polarity Power Supply Bootstrapped Comparator for High Temperature Electronics,” IEEE Electron Device Letters, vol. 32, No. 1, pp. 27-29, Jan. 2011.
  • (Invited) K. J. Chen and C. Zhou, “Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology,” Phys. Sta. Sol. (a), 208, No. 2, pp. 434-438. Feb. 2011.

2010:

  • Z. H. Feng, R. Zhou, S. Y. Xie, J. Y. Yin, J. X. Fang, B. Liu, W. Zhou, K. J. Chen, S. J. Cai, “18-GHz 3.65W/mm Enhancement-mode AlGaN/GaN HFET using Fluorine Plasma Ion Implantation,” IEEE Electron Device Letters, vol. 31, no. 12, pp. 1386-1388, Dec. 2010.
  • J. -Y. Lu, Z.-J. Wang, D. -M. Deng, Y. Wang, K. J. Chen, K. M. Lau, and T.-Y. Zhang, “Determining phonon deformation potentials of hexagonal GaN with stress modulation,” J. Appl. Phys., 108, 123420, 2010.
  • W. Chen, C. Zhou, and K. J. Chen, “High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance,” Electronics Letters, vo. 46, No. 24, pp. 1626-1627, 2010.
  • T. Chang, T. -H. Hsu, E. Y. Chang, Y. -C. Chen, H. -D. Trinh and K. J. Chen, “Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage,” Electronics Letters, vol. 46, No. 18, pp. 1280-1281, 2010.
  • S. Huang, H. Chen, and K. J. Chen, “Effect of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlGaN/GaN heterostructures,” Appl. Phys. Lett., 96, 233510, 2010.
  • K. -Y. Wong, W. Chen, and K. J. Chen, “Characterization and analysis of the temperature-dependent on-resistance in AlGaN/GaN lateral field-effect rectifiers,” IEEE Trans. Electron Devices, vol. 57, No. 8, pp. 1924-1929, 2010.
  • M. J. Wang and K. J. Chen, “Off-state Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique” IEEE Trans. Electron Devices, vol. 57, No. 7, pp. 1492-1496, 2010.
  • K. -Y. Wong, W. Chen, X. Liu, C. Zhou, and K. J. Chen, “GaN Smart Power IC Technology,” Phys. Sta. Sol. (b), 247, No. 7, pp. 1732-1734, 2010.
  • M. J. Wang, C. C. Cheng, C. D. Beling, S. Fung, and K. J. Chen, “Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy,” Phys. Sta. Sol. (a), 207, No. 6, pp. 1332-1334, 2010.
  • Zhou, W. J. Chen, E. L. Piner, and K. J. Chen, “Schottky-Ohmic Drain AlGaN/GaN Normally-Off HEMT with Reverse Drain Blocking Capability,” IEEE Electron Device Letters, vol. 31, No. 7, pp. 668-670, 2010.
  • S. K. Jha, C. P. Liu, Z. H. Chen, K. J. Chen, I. Bello, J. A. Zapien, W. Zhang, and S.-T. Lee, “Integrated Nanorods and Heterostructure Field Effect Transistors for Gas Sensing,” J. Phys. Chem. C, 114, pp. 7999-8004, 2010.  
  • Q. Zhou, K. -Y. Wong, W. J. Chen, and K. J. Chen, “Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode,” IEEE Microwave and Wireless Components Letters, vol. 20, No. 5, pp. 277-279, 2010.
  • K. -Y. Wong, W. J. Chen, and K. J. Chen, “Integrated Voltage Reference Generator for GaN Smart Power Chip Technology” IEEE Trans. Electron Devices, vol. 57, No. 4, pp. 952-955, Apr. 2010.
  • C. H. Zhou, W. J. Chen, E. L. Piner, and K. J. Chen, “AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability,” Electronics Letters, vol. 46, No. 6, pp. 445-447, Mar. 2010.
  • C. H. Zhou, W. J. Chen, E. L. Piner, and K. J. Chen, “AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punch through Breakdown Immunity and Low On-Resistance,” IEEE Electron Device Letters, vol. 31. No. 1, pp. 5-7, 2010.

2009:

  • B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode,” Appl. Phys. Lett. 95, 232111, 2009.
  • K. -Y. Wong, W. J. Chen, Q. Zhou, and K. J. Chen, “Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect diodes for High-Temperature Wireless Sensor and RFID Applications,” IEEE Trans. Electron Devices, vol. 56, No. 12, pp. 2888-2894, Dec. 2009.
  • J. Lv, Z. Yang, G. Z. Yan, Y. Cai, B. Zhang, and K. J. Chen, “Fabrication of Large-area Suspended MEMS Structures Using GaN-on-Si Platform,” IEEE Electron Device Lett., vol. 30, No. 10, pp. 1045-1047, 2009.
  • H. -Y. Huang, Z. -Y. Li, J. -Y. Lu, Z. -J. Wang, C. -S. Wang, K. M. Lau, K. J. Chen, and T. -Y. Zhang, “Microbridge tests on gallium nitride thin films,” J. Micromech. Microeng., vol. 19, 095019, Sep. 2009.
  • L. Yuan, M. Wang, and K. J. Chen, “On the stability of fluorine ions in AlGaN/GaN heterostructure: a molecular dynamics study,” Phys. Sta. Sol. (c), vol. 6, No. S2, pp. S944-S947, June 2009.
  • M. Wang, L. Yuan, F. Xu, B. Shen, and K. J. Chen, “Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy,” Phys. Sta. Sol. (c), vol. 6, No. S2, pp. S952-S955, June 2009.
  • W. Chen, K. -Y. Wong, and K. J. Chen, “HEMT-compatible lateral field-effect rectifier using CF4 plasma treatment,” Phys. Sta. Sol. (c), vol. 6, No. S2, pp. S948-S951, June 2009.
  • W. Chen, K. Y. Wong, and K. J. Chen, “Single-Chip Boost Converter using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally-off HEMT,”IEEE Electron Device Lett., vol. 30, No. 5, pp. 430-432, 2009.
  • M. J. Wang, L. Yuan, F. Xu, B. Shen, and K. J. Chen, “Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation,” J. Appl. Phys., 105, 083519, 2009.
  • H. Zhang and K. J. Chen, “Design of dual-band rat-race couplers,” IET Microwave, Antenna and Propagation, vol. 3, No. 3 pp. 514-521, 2009.
  • M. J. Wang, L. Yuan, C. Cheng, C. Beling, and K. J. Chen, “Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy”, Appl. Phys. Lett., 94, 061910, 2009.
  • X. Huo, G. -W. Xiao, P. C. H. Chan, and K. J. Chen, “Silicon-on-Organic Integration of a 2.4 GHz VCO using High-Q Copper Inductors and Solder-Bumped Flip Chip Technology,” IEEE Trans. Components and Packaging Technology, vol. 32, No. 1, pp. 191-196, 2009.
  • R. Wang, Y. Cai, and K. J. Chen, “Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-mode AlGaN/GaN HEMTs and Digital Circuits”, Solid State Electronics, 53, pp. 1-6, 2009.

2008:

  • L. Yuan, M. J. Wang, and K. J. Chen, “Molecular dynamics calculation of the fluorine ions’ potential energies in AlGaN/GaN Heterostructures,” J. Appl. Phys., 104, 116106, 2008.
  • W. Chen, K. Y. Wong, W. Huang, and K. J. Chen, “High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors,” Appl. Phys. Lett., vol. 92, 253501, 2008.
  • (Invited article) B. K. Li, K. J. Chen, K. M. Lau, W. K. Ge, and J. N. Wang, “Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity,” Phys. Stat. Sol. (c), vol. 5, No. 6, pp. 1892-1894, 2008
  • R. Wang, Y. C. Wu, and K. J. Chen, “Gain Improvement of Enhancement-mode AlGaN/GaN HEMTs Using Dual-Gate Architectures,” Jpn. J. Appl. Phys., Vol. 47, No. 4, pp. 2820-2823, 2008.
  • S. K. Jha, C. Surya, K. J. Chen, K. M. Lau, and E. Jelencovic, “Low-frequency noise properties of double channel AlGaN/GaN HEMTs,” Solid-State Electronics, 52, pp. 606-611, 2008.
  • L. Yuan, M. J. Wang, and K. J. Chen, “Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures: A Molecular Dynamics Simulation Study,” Appl. Phys. Lett., 92, 102109, 2008.
  • H. Zhang and K. J. Chen, “A Second-Order Dual-Band Bandpass Filter Using a Dual-Band Admittance Inverter,” Microwave and Optical Technology Lett., vol. 50, No. 5, pp. 1184-1187, May 2008.
  • J. W. Zhang, H. Zhang, S. G. Lu, Z. K. Xu, and K. J. Chen, “The Effect of Physical Design Parameters on the RF and Microwave Performance of the BST Thin Film Planar Interdigitated Varactors” Sensors and Actuators A: Physical, vol. 141, pp. 231-237, 2008.
  • B. K. Li, W. Ge, J. N. Wang, and K. J. Chen, “Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma,” Appl. Phys. Lett. 92, 082105, 2008.

2007:

  • X. Wang, B. Z. Wang, H. Zhang, and K. J. Chen, “A Tunable Bandstop Resonator Based on a Compact Slotted Ground Structure,” IEEE Trans. Microwave Theory and Techniques, vol. 55, No. 9, pp. 1912-1918, Sep. 2007.
  • R. Wang, Y. Cai, W. C. -W. Tang, K. M. Lau, and K. J. Chen, “Integration of Enhancement and Depletion-mode AlGaN/GaN MIS-HFETs by Fluoride-based Plasma Treatment,” Phys. Stat. Sol. (a), No. 6, 2023-2027, June 2007.
  • K. -Y. Wong, W. Tang, K. M. Lau, and K. J. Chen, “Surface Acoustic Wave Device on AlGaN/GaN Heterostructure Using Two-Dimensional Electron Gas Interdigital Transducers,” Appl. Phys. Lett., vol. 90, 213506, May 2007.
  • Z. Cheng, Y. Cai, J. Liu, Y. G. Zhou, K. M. Lau, and K. J. Chen, “1.9-GHz Low Noise Amplifier Using High-Linearity and Low-Noise Composite-Channel HEMTs,” Microwave and Optical Technology Lett., vol. 49, No. 6, pp. 1360-1362, June 2007.
  • Y, Cai, Z. Cheng, Z. Yang, W. C. -W. Tang, K. M. Lau, and K. J. Chen, “High Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits,” IEEE Electron Device Lett., vol. 28, No. 5, pp. 328-331, May 2007.
  • R. Wang, Y.Cai, W. C. -W. Tang, K. M. Lau, and K. J. Chen, “Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors,”  Jpn J. Appl. Phys, vol. 46, No. 4B, pp. 2330-2333, 2007.
  • D. Song, J. Liu, Z. Cheng, W. C. -W. Tang, K. M. Lau, and K. J. Chen, “Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse,” IEEE Electron Device Lett., vol. 28, No. 3, pp. 189-191, Mar. 2007.
  • H. Zhang and K. J. Chen, “A Stub Tapped Branch-Line Coupler for Dual-Band Operations,” IEEE Microwave and Wireless Components Lett., vol. 17, No. 2, pp. 106-108, Feb. 2007.
  • Z. Cheng, Y. Cai, J. Liu, Y. G. Zhou, K. M. Lau, and K. J. Chen, “A Low Phase-Noise X-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN  HEMTs”, IEEE Trans. Microwave Theory and Techniques, vol. 55, No. 1, pp. 23-29, Jan 2007.
  • J. Liu, Y. Zhou, J. Zhu, Y. Cai, K. M. Lau, and K. J. Chen, “DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs,” IEEE Trans. Electron Devices, vol. 54, No. 1, pp. 2-10, Jan. 2007.

2006:

  • X. Huo, P. C. H. Chan, K. J. Chen, and H. Luong, “A Physical Model for On-Chip Spiral Inductors with Accurate Substrate Modeling,” IEEE Trans. Electron Devices, vol. 53, No. 12, pp. 2942-2949, Dec. 2006.
  • R. Wang, Y. Cai, C. -W. Tang, K. M. Lau, and K. J. Chen, “Enhancement-Mode Si3N4/AlGaN/GaN MISHFETs,” IEEE Electron Device Letters, vol. 27, No. 10, pp. 793-795, Oct. 2006.
  • Y. Cai, Y. G. Zhou, K. M. Lau, and K. J. Chen, “Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based Plasma Treatment: From Depletion Mode to Enhancemend Mode,” IEEE Trans. Electron Devices, vol. 53, No. 9, pp. 2207-2215, Sep. 2006.
  • Y. Cai, Z. Cheng, W. C. K. Tang, K. M. Lau, and K. J. Chen, “Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment,” IEEE Trans. Electron Devices, vol. 53, No. 9, pp. 2223-2230, Sep. 2006.
  • R. Wang, Y. Cai, W. Tang, K. M. Lau, and K. J. Chen, “Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment,” IEEE Electron Device Letters, vol. 27, No. 8, pp. 633-635, Aug. 2006.
  • L. L. W. Leung, J. -W. Zhang, W. C. Hon, and K. J. Chen, “Characterization and Attenuation Mechanisms of CMOS Compatible Micromachined Edge-suspended Coplanar Waveguides on Low-resistivity Silicon Substrate,” IEEE Trans. Advanced Packaging, vol. 29, No. 3, pp. 496-503, Aug. 2006.
  • Z. Yang, R. Wang, D. Wang, B. Zhang. K. M. Lau, and K. J. Chen, “GaN on Patterned Silicon (GPS) Technique for GaN-based MEMS,” Sensors and Actuators A: Physical, vol. 130-131, pp. 371-378, Aug. 2006.
  • Y. Cai, Y. G. Zhou, K. M. Lau, and K. J. Chen “Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage,” IEICE Trans. on Electronics, vol. E89-C, No. 7, 1025-1030, July 2006.
  • S. Jia, Y. Cai, D. Wang, B. Zhang, K. M. Lau, and K. J. Chen “Enhancement-Mode AlGaN/GaN HEMTs on Silicon Substrate,” IEEE Trans. on Electron Devices, vol. 53, No. 6, pp. 1474-1477, June 2006.
  • J. Liu, Y. G. Zhou, J. Zhu, K. M. Lau, and K. J. Chen, “AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch,” Phys. Stat. Sol. (c), vol. 3, No. 6, pp. 2312-2316, 2006.
  • Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen “Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique,” Phys. Stat. Sol. (a), vol. 203, No. 7, pp. 1721-1724, May 2006.
  • L. L. W. Leung and K. J. Chen, “CAD Equivalent Circuit Modeling of Attenuation and Cross-Coupling for Edge-Suspended Coplanar Waveguides on Lossy Silicon Substrate,” IEEE Trans. Microwave Theory and Techniques, vol. 54, No. 5, pp. 2249-2255, May 2006.
  • H. Zhangand K. J. Chen, “Bandpass Filters with Reconfigurable Transmission Zeros Using Varactor-Tuned Tapped Stubs,” IEEE Microwave and Wireless Components Lett.,vol. 16, No. 5, pp. 249-251, May 2006.
  • S. Jia, Y. Cai, D. Wang, B. Zhang, K. M. Lau, and K. J. Chen “Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors on Silicon Substrate,” Phys. Sta. Sol. (c), vol. 3, pp. 2368-2372, 2006.
  • Z. Feng, S. J. Cai, K. J. Chen, and K. M. Lau, “Isoelectronic Indium Surfactant-doped AlGaN/GaN High Electron Mobility Transistors,” Appl. Phys. Lett., vol. 88, 122113, 2006.
  • H. Zhangand K. J. Chen, “Miniaturized Coplanar Waveguide Bandpass Filters Using Multi-Section Stepped Impedance Resonators,” IEEE Trans. Microwave Theory and Techniques, vol. 54, No. 3, pp. 1090-1095, 2006.
  • Z. Yang, R. Wang, D. Wang, B. Zhang. K. M. Lau, and K. J. Chen, “Mechanical Characterization of Suspended GaN Microstructures by GaN-on-Patterned-Silicon Technique,” Appl. Phys. Lett., vol. 88, 041913, 2006.
  • J. Liu, Y. G. Zhou, J. Zhu, K. M. Lau, and K. J. Chen, “AlGaN/GaN/InGaN/GaN Double Heterojunction HEMTs with an InGaN-Notch for Enhanced Carrier Confinement,” IEEE Electron Device Letters, vol. 27, No.1, pp. 10-12, 2006.

2005:

  • Z. Feng, S. J. Cai, K. J. Chen, and K. M. Lau, “Enhanced-Performance of AlGaN-GaN HEMTs Grown on Grooved Sapphire Substrates,” IEEE Electron Device Letters, vol. 26, No. 12, pp. 870-872, Dec. 2005.
  • L. L. W. Leung and K. J. Chen, “Microwave Characterization and Modeling of High Aspect Ratio Through-Wafer Interconnect Vias in Silicon substrates,” IEEE Trans. on Microwave Theory and Techniques, vol. 53, No. 8, pp. 2472-2480, Aug. 2005.
  • Z. Cheng, J. Liu, Y. G. Zhou, Y. Cai, K. J. Chen, and K. M. Lau, “Broadband Microwave Noise Characteristics of High-Linearity Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs,” IEEE Electron Device Letters, vol. 26, No. 8, pp. 521-523, Aug. 2005.
  • Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, “High-Performance Enhancement-Mode AlGaN/GaN HEMTs using Fluoride-based Plasma Treatment,” IEEE Electron Device Letters, vol. 26, No. 7, pp. 435-437, 2005.
  • S. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, “Q-Factor Characterization of Radio-Frequency GaN-based Metal-Semiconductor-Metal Planar Inter-Digitated Varactors,” IEEE Electron Device Letters, vol. 26, No. 7, pp. 432-434, 2005.
  • H. Zhang and K. J. Chen, “A Tri-Section Stepped-Impedance Resonator for Cross-Coupled Bandpass Filters,” IEEE Microwave and Wireless Components Letters, vol. 15, No. 6, pp. 401-403, June 2005.
  • R. M. Chu, Y. G. Zhou, J. Liu, D. Wang, K. J. Chen, and K. M. Lau, “AlGaN-GaN Double-Channel HEMTs,” IEEE Trans. Electron Devices, vol. 52, No. 4, pp. 438-446, Apr. 2005. 
  • Y. G. Zhou, R. M. Chu, J. Liu, K. J. Chen, and K. M. Lau, “Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth,” Phys. Sta. Sol. (c), vol. 2, No. 7, pp. 2663-2667, 2005.
  • J. Liu, Y. G. Zhou, R. M. Chu, Y. Cai, K. J. Chen, and K. M. Lau, “Highly Linear Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs,” IEEE Electron Device Letters, vol. 26, No. 3, pp. 145-147, Mar. 2005.
  • S. Jia, Y. Dikme, D. Wang, K. J. Chen, K. M. Lau, and M. Heuken, “AlGaN-GaN HEMTs on Patterned Silicon (111) Substrate,” IEEE Electron Device Letters, vol. 26, No. 3, pp. 130-132, Mar. 2005.
  • D. Wang, S. Jia, K. J. Chen, K. M. Lau, Y. Dikme, P. van Gemmern, Y. C. Lin, M. Heuken, and R. H. Jansen, “Micro-Raman Scattering Study of the Stress Distribution in GaN films grown on patterned Si (111) substrate using metalorganic vapor deposition,” Journal of Applied Physics, vol. 97, 056103, Mar. 2005.
  • J. W. Zhang, W. C. Hon, L. L. W. Leung, and K. J. Chen, “CMOS-Compatible Micromachining Techniques for Fabricating High-Performance Edge-suspended RF/Microwave Passive Components on Silicon Substrates,” Journal Of Micromechanics and Microengineering, vol. 15, No. 2, pp. 328-335, Feb. 2005.
  • Y. Cai, Y. G. Zhou, and K. J. Chen, and K. M. Lau, “III-Nitride Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors Using Sputtered AlON Thin Films,”Appl. Phys. Lett., vol. 86, No. 3, 032109, Jan. 2005.
  • Y. G. Zhou, D. Wang, R. M. Chu, C. -W. Tang, Y. Qi, Z. Lu, K. J. Chen, and K. M. Lau, “Correclation of In-situ Reflectance Spectrum and Resistivity of GaN/Al2O3 Interfacial Layer in Metalorganic Chemical Vapor Deposition,” IEEE/TMS Journal of Electronic Materials, vol. 34, pp. 112-118, Jan. 2005.

2004:

  • Wang, Y. Dikme, S. Jia, K. J. Chen, K. M. Lau, P. van Gemmern, Y. C. Lin, H. Kalisch, R. H. Jansen, and M. Heuken, “Characterization of GaN grown on patterned Si (111) substrate,” Journal of Crystal Growth, vol. 272, pp. 489-495, Dec. 2004.
  • T. Suligoj, H. Liu, J. K. O. Sin, K. Tsui, R. M. Chu, K. J. Chen, P. Biljanovic, and K. L. Wang, “A Low-Cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs,” Solid-State Electronics, vol. 48, pp. 2047-2050, Nov. 2004.
  • K. J. Chen, K. W. Chan, M. K. W. Wong, N. M. K. Fok, N. C. H. Fan, “High-Performance Large-Inductance Embedded Inductors in Thin Array Plastic Packaging (TAPP) for RF System-in-Package Applications,” IEEE Microwave and Wireless Components Letters, vol. 14, No. 9, pp. 449-451, Sep. 2004.
  • L. L. W. Leung, W. C. Hon, and K. J. Chen, “Low-loss Coplanar Waveguides Interconnects on Low-resistivity Silicon Substrate,” IEEE Trans. on Components and Packaging Technologies, vol. 27, No. 3, pp. 507-512, Sep. 2004.
  • K. J. Chen, W. C. Hon, J. -W. Zhang, and L. L. W. Leung, “CMOS-Compatible Micromachined Edge-suspended Inductors with High Q-factors and Self-resonance Frequencies,” IEEE Electron Device Letters, vol. 25, No. 6, pp. 363-365, June 2004.
  • L. L. W. Leung, K. J. Chen, X. Huo, and P. C. H. Chan, “Low-loss Microwave Filter on CMOS-grade Standard Silicon Substrate with a Low-k BCB Dielectric,” Microwave and Optical Technology Letters, vol. 40, No. 1, pp. 9-11, Jan. 2004.

2003:

  • R. M. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, “Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures,” Phys. Sta. Sol.(c), No. 7, pp. 2400-2403, Oct. 2003.
  • K. Tsui, K. J. Chen, S. Lam, and M. Chan, “0.5-um Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Application,” Jpn. J. Appl. Phys., vol. 42, Part 1, No. 8, pp. 4982-4986, Aug. 2003.
  • K. J. Chen, G. F. Niu, “Logic Synthesis and Circuit Modeling of a Programmable Logic Gate based on Controlled Quenching of Series-Connected Negative Differential Resistance Devices,” IEEE J. Solid-State Circuits, vol. 38, No. 2, pp. 312-318, Feb. 2003.

2002:

  • X. Huo, K. J. Chen, and P.C.H. Chan, “Silicon-based high-Q inductors incorporating electroplated copper and low-k BCB dielectric,” IEEE Electron Device Letters, Vol. 23, No. 9, September, pp. 520-522, 2002.

1998:

  • T. Waho, K. J. Chen, and M. Yamamoto, “Resonant-Tunneling Diode and HEMT logic circuits with multiple thresholds and multi-level output,” IEEE J. Solid-State Circuits, vo. 33, pp.268-274, Feb. 1998.

1997:

  • K. J. Chen, K. Maezawa, and M. Yamamoto, “High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs),” IEEE Tran. Electron Devices, vol. 44, pp. 2038-2040, Nov. 1997.
  • T. Waho, K. J. Chen, and M. Yamamoto, “A novel functional logic circuit using resonant-tunneling devices for multiple-valued logic applications,” Jpn. J. Appl. Phys., vol. 36, Part1, No. 3B, pp. 1818-1821, Mar. 1997.

1996:

  • K. J. Chen, K. Maezawa, T. Waho, and M. Yamamoto, “Device technology for monolithic integration of InP-based resonant-tunneling diode and HEMT,” IEICE Tran. Electronics, pp. 1515-1524, vol. E79-C, Nov. 1996.
  • K. J. Chen, T. Waho, K. Maezawa, and M. Yamamoto, “An exclusive-OR logic circuit based on the controlled quenching of series-connected negative differential resistance devices,” IEEE Electron Device Letters, pp. 309-311, vol. 17, June 1996.
  • K. J. Chen and M. Yamamoto, “Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors (RTHEMT’s),” IEEE Electron Device Letters, vol. 17, pp. 235-238, May. 1996.
  • T. Waho, K. J. Chen and M. Yamamoto, “A novel multiple-valued logic gate using resonant tunneling devices,” IEEE Electron Device Letters, vol. 17, pp. 223-225, May. 1996.
  • K. J. Chen, K. Maezawa, and M. Yamamoto, “InP-based high-performance monostable-bistable transition logic element (MOBILE’s) using integrated multiple-input resonant-tunneling devices,” IEEE Electron Device Letters, vol. 17, pp. 127-129, Mar. 1996.
  • K. J. Chen, T. Enoki, K. Maezawa, K. Arai, and M. Yamamoto, “High-performance InP-based enhancement-mode HEMTís using non-alloyed ohmic contacts and Pt-buried gate,” IEEE Trans. on Electron Devices, vol. 43, no. 2, pp. 252-257, Feb. 1996.
  • K. J. Chen, K. Maezawa, and M. Yamamoto, “InP-based high-performance monostable-bistable transition logic element (MOBILE): an intelligent logic gate featuring weighted-sum threshold operations,” Jpn. J. Appl. Phys., vol. 35, Part1, No. 2B, pp. 1172-1177, Feb. 1996.

1995:

  • K. J. Chen, K. Maezawa, and M. Yamamoto, “Novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor,” Applied Physics Letters, vol. 67, pp. 3608-3610, Dec. 1995.
  • K. J. Chen, K. Maezawa, K. Arai, M. Yamamoto, and T. Enoki, “Improved source resistance in InP-based enhancement-mode HEMTs for high-speed digital applications,” IEE Electronics Letters, vol. 31. pp. 925-927, May, 1995.
  • K. J. Chen, T. Akeyoshi, and K. Maezawa, “Monostable-bistable transition logic elements (MOBILEs) based on monolithic integration of resonant-tunneling diodes and FETs,” Jpn. J. Appl. Phys. pp. 1199-1203, Feb. 1995.
  • K. J. Chen, T. Akeyoshi, and K. Maezawa, “Monolithic integration of resonant tunneling diodes and FETís for monostable-bistable transition logic elements (MOBILE’s),” IEEE Electron Device Letters, vol. 16, pp. 70-73, Feb. 1995.

1994:

  • K. J. Chen, T. Akeyoshi, and K. Maezawa, “Reset-set flip-flop based on a novel approach of modulating resonant-tunneling current with FET gates,” IEE Electronics Letters, vol. 30, pp. 1805-1806, Oct. 1994.

1993:

  • K. J. Chen, C. H. Yang, and R.A. Wilson, “Experimental realization of a new transistor”, IEEE Trans. Electron Devices, vol. ED-40, pp. 267-272, 1993.
  • K. J. Chen, C. H. Yang, R.A. Wilson, and C.E.C. Wood, “Single transistor static memory cell: Circuit application of a new quantum transistor”, Appl. Phys. Lett., vol. 62, pp. 96-98, 1993.

1992:

  • K. J. Chen, C. H. Yang, and R.A. Wilson, “Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction”, Appl. Phys. Lett., vol. 60, pp. 2113-2115, 1992.
  • K. J. Chen, and C. H. Yang, ”Modeling of a new field-effect resonant tunneling transistor”, J. Appl. Phys., vol. 71, pp. 1537-1539, 1992.

1991:

  • K. J. Chen, J. G. Chen, C. H. Yang, and R. A. Wilson, “The I-V characteristics of double-barrier resonant tunneling diodes: observation and calculation on their temperature dependence and asymmetry”, J. Appl. Phys., vol. 70, pp. 3131-3136, 1991.
  • J. G. Chen, K. J. Chen, R.A. Wilson, W. Johnson, and C.H. Yang, “On the intrinsic bistability in resonant tunneling structures: observation of the area and temperature dependence of hysteresis”, J. Appl. Phys. vol. 70, pp. 2473-2475, 1991.