2019:
- “TRANSISTORS HAVING ON-CHIP INTEGRARED PHOTON SOURCE OR PHOTONIC-OHMIC DRAIN TO FACILIATE DE-TRAPPING ELECTRONS TRAPPED IN DEEP TRAPS OF TRANSISTORS,” US Patent Application Pub. No. 15/526,744, Kevin J. Chen, Baikui Li and Xi Tang, to be granted, 2019.
2016:
- “Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors”. Taiwan Patent Application I523220. Inventors: Kevin J. Chen, Maojun Wang, granted (2016)
- “Normally-off III-Nitride Metal-2DEG Tunnel Junction Field-Effect Transistors,” China Patent Application ZL201080067880.4. Inventors: Kevin J. Chen, Li Yuan, Hongwei Chen, and Chunhua Zhou, granted (2016)
- “Normally-off III-Nitride Metal-2DEG Tunnel Junction Field-Effect Transistors,” Taiwan Patent Application I505462. Inventors: Kevin J. Chen, Li Yuan, Hongwei Chen, and Chunhua Zhou, granted (2016)
2015:
- “Gate Protected Semiconductor Devices,” US Patent Application Pub. No. 9160326, Inventors: Kevin J. Chen, and Alex Kwan, granted (2015)
- “Integrated HEMT and Lateral Field-Effect Rectifier Combination, Methods, and Systems”. Taiwan Patent Application I505441. Inventors: Kevin J. Chen, Wanjun Chen and Chunhua Zhou, granted (2015)
2014:
- “Normally-off III-Nitride Metal-2DEG Tunnel Junction Field-Effect Transistors,” US Patent Application Pub. No. US Patent, 8,809,987 B2, 2014, Inventors: Kevin J. Chen, Li Yuan, Hongwei Chen, and Chunhua Zhou, granted (2014)
- “Reliable Normally-Off III-Nitride Active Device Structures, and Related Methods and Systems”; Taiwan Patent Application I460857. Inventor: Kevin J. Chen. Granted (2014)
- “Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors”. China Patent Application ZL200910176048.7. Inventors: Kevin J. Chen, Maojun Wang, granted (2014)
2013:
- “Passivation of group III-nitride heterojunction devices,” US Patent Application Pub. No. 13/895,511, Inventors: Kevin J. Chen, Sen Huang, Qimeng Jiang, and Zhikai Tang, granted (2013)
- “Reliable Normally-Off III-Nitride Active Device Structures, and Related Methods and Systems”; US Patent Application Pub. No. 12/185,241. Inventor: Kevin J. Chen. Granted (2013)
- “Low Density Drain HEMTs”; Taiwan Patent Application 1406413. Inventors: Kevin J. Chen and Kei May Lau. granted (2013)
- “Reliable Normally-Off III-Nitride Active Device Structures, and Related Methods and Systems”; China Patent Application ZL200810145148.9. Inventor: Kevin J. Chen. Granted (2013)
2012:
- “Integrated HEMT and Lateral Field-Effect Rectifier Combination, Methods, and Systems”. China Patent Application ZL200910133336.4. Inventors: Kevin J. Chen, Wanjun Chen and Chunhua Zhou, granted (2012)
2011:
- “Integrated HEMT and Lateral Field-Effect Rectifier Combination, Methods, and Systems”. US Patent Application Pub. No. 12/414,865. Inventors: Kevin J. Chen, Wanjun Chen and Chunhua Zhou, granted (2011)
- “Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HFETs”; 11/564,780. Inventors: Kevin J. Chen, Yong Cai and Kei May Lau, granted (2011)
- “Enhancement-Mode III-N Devices, Circuits, and Methods”; US Patent Publication Pub. No. 11/564,766. Inventors: Kevin J. Chen, Yong Cai, and Kei May Lau, granted. (2011)
2010:
- “Transistors and Rectifiers utilizing hybrid electrodes and methods of fabricating the same,” US Patent Application Pub. No. 12/843,313, Inventors: Kevin J. Chen and Chunhua Zhou, granted (2010)
- “Low Density Drain HEMTs”; US Patent Application Pub. No. 11/564,795. Inventors: Kevin J. Chen and Kei May Lau. granted (2010)
- “Low Density Drain HEMTs”; China Patent Application ZL200680052007. Inventors: Kevin J. Chen and Kei May Lau. granted (2010)
- “Transistors and Rectifiers utilizing hybrid electrodes and methods of fabricating the same,” China Patent Application ZL201080067880.4, Inventors: Kevin J. Chen and Chunhua Zhou, granted (2010)
- “Transistors and Rectifiers utilizing hybrid electrodes and methods of fabricating the same,” Taiwan Patent Application I520332, Inventors: Kevin J. Chen and Chunhua Zhou, granted (2010)
1997:
- “Semiconductor Devices”, Japanese Patent H 9-162360, 1997. Inventors: Kevin J. Chen, Koichi Maezawa, and Masafumi Yamamoto, Japan, granted