INVITED TALKS IN CONFERENCES

2021:

  • K. J. Chen, “GaN: a Crystalline Nanophase of GaN and its Device Application,” Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity, Japan, 1-3 Feb. 2021.

2020:

  • K. J. Chen, J. Wei, G. Tang, H. Xu, Z. Zheng, L. Zhang, and W. Song, “Planar GaN Power Integration – the World is Flat,” 2020 Int. Electron Device Meeting (IEDM), San Francisco, USA, Dec. 12-18, 2020.

2018:

  • K. J. Chen and G. Tang, “GaN Power Integrated Circuits,” International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, Nov. 11-16, 2018.
  • M. Hua and K. J. Chen, “Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric,” 2018 IEEE 14th Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2018), Qingdao, China, 31 Oct. – 3 Nov. 2018.
  • K. J. Chen, “Understanding the Dynamic Behavior in GaN-on-Si Power Devices and ICs,” the 6th International Workshop of Power Supply-on-Chip (PwrSoC18), Oct. 17-19, 2018, Hsinchu, Taiwan.
  • K. J. Chen and M. Hua, “Gate Dielectric Technology for Reliable and Stable Normally-off GaN Power MIS-FET,” 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD18), July 2-4, 2018, Kitakyushu, Japan.
  • K. J. Chen, M. Hua, Z. Zhang, and J. He, “Enhancement-mode GaN-based MIS-FETs and MIS-HEMTs,” 2018 MRS (Materials Research Society) Spring Meeting & Exhibition, April 2-6, 2018, Phoenix, Arizona, USA.

2014:

  • K. J. Chen and S. Yang, “Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMT” 2014 Int. Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug. 24-29, 2014.

2013:

  • K. J. Chen, “Toward GaN-based Power Integrated Circuits,” The 2nd Int. Conf. on Advanced Electromaterials (ICAE 2013), Nov. 12-15, 2013, ICC Jeju, Korea.
  • K. J. Chen, “Technologies for III-N Heterogeneous Mixed-signal Electronics,” 10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug. 25-30, 2013.

2012:

  • K. J. Chen, “Fluorine Plasma Ion Implantation: a GaN Normally-off HEMT Technology” 4th Int. Symp. On Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2012), Aichi, Japan, Mar. 4-8, 2012.

2011:

  • K. J. Chen, “Toward Integrated GaN Power Electronics,” 3rd Global COE International Symposium—Electronic Devices Innovation — EDIS2011, December 16-17, 2011, Osaka, Japan.
  • K. J. Chen, L. Yuan, M.J. Wang, H. Chen, S. Huang, C. Zhou, B.K. Li, J.N. Wang, “Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology,” 2011 Int. Electron Device Meeting (IEDM), Washington D. C., USA, Dec. 4-7, 2011.
  • K. J. Chen, “Role of Fluorine Plasma Ion Implantation in GaN Electron Devices,” SPIE Photonics West Conference, OPTO, San Francisco, USA, 22-27 Jan. 2011.

2010:

  • K. J. Chen and C. Zhou “GaN Smart Discrete Power Devices,” The 10th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08), Shanghai, China, Nov. 1-4, 2010.
  • K. J. Chen, “GaN Smart Power IC Technologies,” IEEE University Government Industry Micro/Nano Symposium (UGIM 2010), Purdue University, West Lafayette, IN, USA, June 28-July 1, 2010.
  • K. J. Chen, “Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology,” The 37th Int. Symp. On Compound Semiconductors (ISCS2010), Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010.

2009:

  • K. J. Chen, K. -Y. Wong, W. J. Chen*, C. Zhou, and X. Liu, “Device Technology Platform for GaN Smart Power ICs,” 2009 Int. Electron Device and Material Symposium (IEDMS2009), Taoyuan, Taiwan, Nov. 18-21, 2009.
  • K. J. Chen, “GaN Smart Power IC Technologies,” IEEE Int. Conf. on Electronic Devices and Solid State Circuits (EDSSC09), Xi’an, China, Nov. 25-27, 2009.
  • W. J. Chen, K. –Y. Wong, and K. J. Chen, “GaN Smart Power IC Technologies,” Workshop on Wide Bandgap Semiconductor Devices, Shenzhen, China, Aug. 19-21, 2009.
  • K. J. Chen, “Fluorine Plasma Ion Implantation Technology: A Robust Approach to Modulating Threshold Voltage and Potential in III-nitride Devices,” The 18th WIMNACT (Workshop and IEEE EDS Mini-colloquium on NAnometer CMOS Technology)-MQ3-New Delhi, India – Mini-Colloquia on “Compact Modeling and Fabrication techniques of advance MOSFET/ HEMT structures” June 04-05, 2009, University of Delhi South Campus, New Delhi, India. 
  • K. J. Chen, “Role of Fluorine Ions in GaN Transistors,” The Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009), Zhang Jia Jie, China, May 24-28, 2009.

2008:

  • K. J. Chen “Fluorine Plasma Ion Implantation (Treatment) Technology: A New Dimension in GaN Electronic Device Processing,” The 9th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08), Beijing, China, Oct. 20-23, 2008.

2006:

  • K. J. Chen and K. M. Lau, “Core Technologies for III-Nitride Integrated Microsensors,” 6th Emerging Information Technology Conference (EITC’06), Richardson, Texas, USA, Aug. 10-13, 2006.

2005:

  • K. J. Chen, J. Liu, Y. G. Zhou, and K. M. Lau, “Channel Engineering of III-Nitride HEMTs for Enhanced Device Performance,” 2005 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD05), Seoul, Korea, June 27-29, 2005.

1995:

  • M. Yamamoto, K. Maezawa, and K. J. Chen, “Monostable-Bistable Transition Resonant Tunneling Logic Gate, MOBILE, Constructed with Monolithic Integration of RTD and FET,” Int. Workshop on Future Information Processing Technologies, Porvoo, Finland, Sep. 4-8, 1995.