CONFERENCE PAPERS

2021:

  • G. Lyu, J. Wei, W. Song, Z. Zheng, L. Zhang, J. Zhang, Y. Cheng, S. Feng, Y. H. Ng, T. Chen, K. Zhong, J. Liu, R. Zeng, and K. J. Chen, “A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs,” 2021 Int. Elec. Dev. Meeting (IEDM), 5.2.1-5.2.4, December 2021, San Francisco, USA.
  • L. Zhang, Z. Zheng, Y. Cheng, Y. H. Ng, S. Feng, W. Song, T. Chen, and K. J. Chen, “SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs,” 2021 Int. Elec. Dev. Meeting (IEDM), 5.3.1-5.3.4, December 2021, San Francisco, USA.
  • Y. Cheng, Y. Wang, S. Feng, Z. Zheng, T. Chen, G. Lyu, T. H. Ng, and K. J. Chen, “Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs,” The 33rd Int. Symp. On Power Semiconductor Devices and IC’s (ISPSD), 30 May – 3 June 2021, Nagoya, Japan.
  • K. Zhong, H. Xu, S. Yang, Z. Zheng, J. Chen, and K. J. Chen, “A Bootstrap Voltage Clamping Circuit for Dynamic Vth Characterization in Schottky-type p-GaN Gate Power HEMT,” The 33rd Int. Symp. On Power Semiconductor Devices and IC’s (ISPSD), 30 May – 3 June 2021, Nagoya, Japan.
  • L. Zhang, S. Yang, Z. Zheng, W. Song, and K. J. Chen, “Surface Reinforcement Technology for Suppressing Hot-Carrier-Induced Degradations in p-GaN Gate Power HEMTs,” The 33rd Int. Symp. On Power Semiconductor Devices and IC’s (ISPSD), 30 May – 3 June 2021, Nagoya, Japan.
  • Z. Jiang, M. Hua, X. Huang, L. Li, J. Chen, and K. J. Chen, “Impact of OFF-State Gate Bias on Dynamic Ron of p-GaN Gate HEMT,” The 33rd Int. Symp. On Power Semiconductor Devices and IC’s (ISPSD), 30 May – 3 June 2021, Nagoya, Japan.
  • J. Sun, K. Zhong, Z. Zheng, G. Lyu, and K. J. Chen, “Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs,” The 33rd Int. Symp. On Power Semiconductor Devices and IC’s (ISPSD), 30 May – 3 June 2021, Nagoya, Japan.
  • K. Zhong, J. Sun, Y. Wang, G. Lyu, S. Feng, T. Chen, and K. J. Chen, “Avalanche Capability of 650-V Normally-off GaN/SiC Cascode Power Devices,” The 33rd Int. Symp. On Power Semiconductor Devices and IC’s (ISPSD), 30 May – 3 June 2021, Nagoya, Japan.

2020:

  • (Invited) K. J. Chen, J. Wei, G. Tang, H. Xu, Z. Zheng, L. Zhang, and W. Song, “Planar GaN Power Integration – the World is Flat,” 2020 Int. Electron Device Meeting (IEDM), San Francisco, USA, Dec. 12-18, 2020.
  • M. Hua, J. Chen, C. Wang, L. Liu, L. Li, J. Zhao, J. Wei, L. Zhang, Z. Zheng, and K. J. Chen, “E-mode p-GaN Gate HEMT with p-FET bridge for Higher Vth and Enhanced Vth Stability,” 2020 Int. Electron Device Meeting (IEDM), San Francisco, USA, Dec. 12-18, 2020.
  • Y. Wang, G. Lyu, J. Wei, Z. Zheng, K. Zhong, and K. J. Chen, “All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications,” IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020, Virtual Conference, Japan, 23-25 September 2020.
  • Yaqiang Liao, Tao Chen, Jia Wang, Yuto Ando, Xu Yang, Hirotaka Watanabe, Jun Hirotani, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, K. J. Chen, and Hiroshi Amano, “Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes,” 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.
  • Han Xu, Jin Wei, Ruiliang Xie, Zheyang Zheng, K. J. Chen, “A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage,” 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.  
  • Jiahui Sun, Jin Wei, Zheyang Zheng, Gang Lyu, and K. J. Chen, “Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs Under Single and Repetitive Tests,”
    2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.  
  • Jiabei He, Jin Wei, Zheyang Zheng, Song Yang, Yang Li, Baoling Huang, and K. J. Chen, “Low-Temperature Accelerated Gate Reliability of Schottky-Type p-GaN Gate HEMTs,” 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.  
  • Jin Wei, Meng Zhang, and K. J. Chen, “Design of Dual-Gate Superjunction IGBT Towards Fully Conductivity-Modulated Bipolar Conduction and Near-Unipolar Turn-Off,” 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.
  • Gang Lyu, Yuru Wang, Jin Wei, Zheyang Zheng, Jiahui Sun, K. J. Chen, “Dv/Dt-Control of 1200-V Co-Packaged SiC-JFET/GaN-HEMT Cascode Device,” 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.
  • Zheyang Zheng, Wenjie Song, Li Zhang, Song Yang, Han Xu, Roy Wong, Jin Wei, K. J. Chen, “Enhancement-Mode GaN p-Channel MOSFETs for Power Integration,” 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.
  • Li Zhang, Jin Wei, Zheyang Zheng, Wenjie Song, Song Yang, Sirui Feng, K. J. Chen, “700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode,” 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.
  • J. Chen, M. Hua, J. Jiang, J. He, J. Wei, and K. J. Chen, “Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-Bias Stress,” 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.
  • C. Wang, M. Hua, S. Yang, L. Zhang, and K. J. Chen, “E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability,” 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-6, 2020.

2019:

  • S. Huang, J. Wei, S. Yang, Y. Wang, Z. Zheng, J. He, and K. J. Chen, “DLTS Investigation of Transient Capacitance and Trap States on p-GaN Gate HEMT Structures,” 13th Int. Conf. on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, Jul. 7-12, 2019.
  • Y. Wang, J. Wei, S. Yang, J. Lei, M. Hua, and K. J. Chen, “Characterization of Dynamic IOFF in Schottky-Type p-GaN Gate HEMTs,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
  • J. Lei, J. Wei, G. Tang, Z. Zhang, Q. Qian, M. Hua, Z. Zheng, Y. Wang, and K. J. Chen, “Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
  • J. He, J. Wei, S. Yang, M. Hua, K. Zhong, and K. J. Chen, “Temperature-Dependent Gate Degradation of p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
  • H. Xu, G. Tang, J. Wei, and K. J. Chen, “Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
  • J. Sun, J. Wei, Z. Zheng, Y. Wang, and K. J. Chen, “Repetitive Short Circuit Energy Dependent VTH Instability of 1.2kV SiC Power MOSFETs,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
  • J. Wei, H. Xu, R. Xie, M. Zhang, H. Wang, Y. Wang, K. Zhong, M. Hua, J. He, and K. J. Chen, “Dynamic Threshold Voltage in p-GaN Gate HEMT,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
  • M. Hua, S. Yang, Z. Zheng, J. Wei, Z. Zhang, and K. J. Chen, “Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
  • S. Huang, X. Wang, X. Liu, X. Kang, J. Fan, S. Yang, H. Yin, K. Wei, Y. Zhang, X. Wang, W. Wang, J. Shi, H. Gao, Q. Sun, and K. J. Chen, “Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
  • J. Wei, M. Zhang, H. Jiang, B. Li, Z. Zheng, and K. J. Chen, “Investigations of p-shielded SiC trench IGBT with considerations on IE effect, oxide protection and dynamic degradation,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
  • Z. Zheng, M. Hua, J. Wei, Z. Zhang, and K. J. Chen, “Identifying the Location of Hole-Induced Gate Degradation in LPCVD−SiNx/GaN MIS-FETs under High Reverse-Bias Stress,” 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.

2018:

  • M. Hua, X. Cai, S. Yang, Z. Zhang, Z. Zheng, J. Wei, N. Wang, and K. J. Chen, “Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaOxN1- x Channel,” 2018 Int. Electron Device Meeting (IEDM 2018), San Francisco, CA, USA, Dec. 1-5, 2018.
  • M. Hua and K. J. Chen, “High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer,” 23rd IEEE International Conference on Digital Signal Processing (DSP’2018), Shanghai, China, Nov. 19-21, 2018.
  • (Invited) K. J. Chen and G. Tang, “GaN Power Integrated Circuits,” International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, Nov. 11-16, 2018.
  • J. He, G. Tang, M. Hua, and K. J. Chen, “Threshold Voltage Instability in p-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress,” International Workshop on Nitride Semiconductor 2018 (IWN 2018), Kanazawa, Japan, Nov. 11-16, 2018.
  • Y. Wang, M. Hua, G. Tang, Z. Zheng, S. Yang, and K. J. Chen, “Dynamic OFF-State Leakage Current (IOFF) in GaN power HEMTs,” International Workshop on Nitride Semiconductor 2018 (IWN 2018), Kanazawa, Japan, Nov. 11-16, 2018.
  • X. Tang, Q. Zhou, R. Qiu, R. Zheng, B. Li, and K. J. Chen, “Opto-electrical memory devices realized on AlGaN/GaN heterostructure platform,” International Workshop on Nitride Semiconductor 2018 (IWN 2018), Kanazawa, Japan, Nov. 11-16, 2018.
  • (Invited) M. Hua and K. J. Chen, “Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNx Gate Dielectric,” 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Qingdao, China, Oct. 31- Nov. 3, 2018.
  • (Invited) K. J. Chen, “Understanding the Dynamic Behavior in GaN-on-Si Power Devices and IC’s” The International Workshop on Power Supply On Chip (PwrSoC 2018), Hsinchu, Taiwan, Oct. 17-19, 2018.
  • G. Tang, M. Kwan, Z. Zhang, J. He, J. Lei, R. Su, F. Yao, Y. Lin, J. Yu, T. Yang, C. Chern, T. Tsai, H. Tuan, A. Kalnitsky, and K. J. Chen, “High-speed, high-reliability GaN power device with integrated gate driver”, 2018 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’18), Chicago, IL, USA, May 13-17, 2018.
  • J. Lei, J. Wei, G. Tang, and K. J. Chen, “Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-recessed Gated Schottky Drain,” 2018 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’18), Chicago, IL, USA, May 13-17, 2018.
  • J. Wei, M. Zhang, H. Jiang, S. To, S. Kim, J. Kim, and K. J. Cheng, “SiC Trench IGBT with Diode-clamped P-shield for Oxide Protection and Enhanced Conductivity Modulation,” 2018 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’18), Chicago, IL, USA, May 13-17, 2018.
  • J. He, M. Hua, Z. Zhang, G. Tang, and K. J. Chen, “Performance and stability of enhancement-mode fully-recessed GaN MIS-FETs and partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx gate dielectric,” 2018 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2018), Austin, TX, USA, May 7-10, 2018.
  • Z. Zhang, M. Hua, J. He, Q. Qian, and K. J. Chen, “Modification of amorphous-SiNx/GaN interface trap density by nitridation: A first-principles calculation study,” 2018 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2018), Austin, TX, USA, May 7-10, 2018.
  • Q. Qian, Z. Zhang, and K. J. Chen, “Monitoring the Surface Functionalization of MoS2 and WSe2 for High-k Integration Using in Situ Resonant Raman Spectroscopy – A First-principle study,” Materials Research Society Spring Meeting & Exhibit (2018 MRS), Phoenix, USA, Apr. 2-6, 2018.
  • K. J. Chen and M. Hua, “Enhancement-mode GaN-based MIS-FETs and MIS-HEMTs,” Materials Research Society Spring Meeting & Exhibit (2018 MRS), Phoenix, USA, Apr. 2-6, 2018
  • R. Xie, G. Xu, X. Yang, G. Tang, J. Wei, Y. Tian, F. Zhang, W. Chen, L. Wang, and K. J. Chen, “Modeling the gate driver IC for GaN transistor: A black-box approach,” 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, TX, USA, Mar. 4-8, 2018.

2017:

  • M. Hua, J. Wei, Q. Bao, J. He, Z. Zhang, Z. Zheng, J. Lei, and K. J. Chen, “Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs,” 2017 Int. Electron Device Meeting (IEDM 2017), San Francisco, CA, USA, Dec. 4-6, 2017.
  • J. Lei, J. Wei, G. Tang, Q. Qian, M. Hua, Z. Zhang, Z. Zheng, and K. J. Chen, “An Interdigitated GaN MIS-HEMT/SBD Normally-Off Power Switching Device with Low ON-resistance and Low Reverse Conduction Loss,” 2017 Int. Electron Device Meeting (IEDM 2017), San Francisco, CA, USA, Dec. 4-6, 2017.
  • R. Xie, G. Xu, X. Yang, H. Wang, M. Tian, Y. Tian, F. Zhang, W. Chen, L. Wang, and K. J. Chen, “Switching Transient Analysis for Normally-off GaN Transistors with p-GaN Gate in a Phase-leg Circuit” in Proc. Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017.
  • Q. Qian, Z. Zhang, M. Hua, J. Wei, J. Lei, and K. J. Chen, “Low-Resistance Contact to Single-Layer MoS2 by Depositing Ultrathin High-k Dielectric with Remote N2 Plasma Treatment as Tunneling Layer,” 2017 International Conference on Solid State Device and Materials (SSDM 2017) Sendai, Japan, Sep. 19-21, 2017.
  • G. Tang, J. Wei, Z. Zhang, M. Hua, X. Tang, H. Wang, and K. J. Chen, “Characterization and Analysis of Dynamic Ron of GaN-on-Si lateral Power Devices with Grounded and Floating Si Substrate,” 12th Int. Conf. on Nitride Semiconductors (ICNS-12), Strasbourg, France, July. 24- 28, 2017.
  • J. He, M. Hua, G. Tang, Z. Zhang, and K. J. Chen, “Comparison of E-mode Fully recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack,” 12th Int. Conf. on Nitride Semiconductors (ICNS-12), Strasbourg, France, July. 24- 28, 2017.
  • M. Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang, and K. J. Chen, “PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer,”12th Int. Conf. on Nitride Semiconductors (ICNS-12), Strasbourg, France, July. 24- 28, 2017.
  • Q. Bao, Y. Li, Z. Zhang, Q. Qian, J. Lei, G. Tang, B. Huang and K. J. Chen, “Effective Cross-Plane Thermal Conductivity of GaN-on-Si (111) Epi-layers Evaluated by 3-Omega Technique,” 12th Int. Conf. on Nitride Semiconductors (ICNS-12), Strasbourg, France, July. 24- 28, 2017.
  • G. Tang, H. Wang, J. Lei, and K. J. Chen, “Monolithic Intergration of E/D-Mode HEMTs for Logic Circuit on the p-GaN Gate Technology Platform,” 12th Int. Conf. on Nitride Semiconductors (ICNS-12), Strasbourg, France, July. 24- 28, 2017.
  • M. Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang, and K. J. Chen, “TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack,” 2017 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2017) Indian Wells. CA, USA, May 22-26, 2017.
  • M. Hua, Z. Zhang, Q. Qian, J. Wei, Q. Bao, G. Tang, and K. J. Chen, “High-Performance Fully-recessed Enhancement Mode GaN MIS-FETs with Crystalline Oxide Interlayer,” 2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’17), Sapporo, Japan, May 28- June 1, 2017. (Charitat Award: for the best Young Researcher)
  • G. Tang, J. Wei, Z. Zhang, X. Tang, M. Hua, H. Wang, and K. J. Chen, “Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices,” 2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’17), Sapporo, Japan, May 28- June 1, 2017.
  • J. Wei, Y. Wang, M. Zhang, H. Jiang, and K. J. Chen, “High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture,” 2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’17), Sapporo, Japan, May 28- June 1, 2017.
  • J. Wei, M. Zhang, H. Jiang, H. Wang, and K. J. Chen, “Charge storage effect in SiC trench MOSFET with a floating p-shield and its impact on dynamic performances,” 2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’17), Sapporo, Japan, May 28- June 1, 2017.
  • S. Yang, C. Zhou, S. Han, K. Sheng, and K. J. Chen, “Buffer Trapping-Induced RON Degradation in GaN- on-Si Power Transistors: Role of Electron Injection from Si Substrate,”.2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’17), Sapporo, Japan, May 28- June 1, 2017.

2016:

  • Z. Zhang, B. Li, X. Tang, Q. Qian, M. Hua, B. Huang, and K. J. Chen, ” First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom,” 47th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 8-10, 2016.
  • Z. Zhang, B. Li, X. Tang, Q. Qian, M. Hua, B. Huang, and K. J. Chen, “Nitridation of GaN Surface for Power Device Application: A First-Principles Study,” 2016 Int. Electron Device Meeting (IEDM 2016), San Francisco, CA, USA, Dec. 5-7, 2016.
  • M. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, “Integration of LPCVD-SiNx Gate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime,” 2016 Int. Electron Device Meeting (IEDM 2016), San Francisco, CA, USA, Dec. 5-7, 2016.
  • S. Yang, Z. Tang, Y. Lu, Q. Jiang, and A. Zhang, “Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET,” IFWS 2016, Beijing, China, Nov. 15-17, 2016.
  • B. Li, X. Tang, J. Wang, and K. J. Chen, “Enhancing Dynamic Performance of Gan-on-Si Power Devices With on-chip Photon Pumping,” 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2016) Hangzhou, China, Oct. 25-28, 2016.
  • H. Wang, R. Xie, C. Liu, J. Wei, G. Tang, and K. J. Chen, ” Maximizing the Performance of 650 V p-GaN Gate HEMTs: Dynamic RON Characterization and Gate-Drive Design Considerations, ” 2016 IEEE Energy Conversion Cong. and Expo. (ECCE), Milwaukee, WI, USA, Sept. 18-22, 2016.
  • R. Xie, H. Wang, G. Tang, X. Yang, and K. J. Chen, ” An Analytical Model for False Turn-On Evaluation of GaN Transistor in Bridge-Leg Configuration, ” 2016 IEEE Energy Conversion Cong. and Expo. (ECCE), Milwaukee, WI, USA, Sept. 18-22, 2016.
  • S. Yang, S. Liu, C. Liu, M. Hua, G. Longobardi, F. Udrea, and K. J. Chen, ” Performance Enhancement and Characterization Techniques for GaN Power Devices, ” 2016 Compound Semiconductor Week (CSW 2016), Toyama, Japan, June 26-30, 2016.
  • J. Wei, S. Liu, B. Li, X. Tang, Z. Zhang, G. Tang, and K. J. Chen, ” Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT, ” 2016 Compound Semiconductor Week (CSW 2016), Toyama, Japan, June 26-30, 2016.
  • S. Yang, Y. Lu, S. Liu, H. Wang, C. Liu, and K. J. Chen, “Impact of VTH Shift on RON in E/D-Mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive, ” 2016 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’16), Prague, Czech Republic, Jun. 12-16, 2016.
  • X. Tang, B. Li, H. Wang, J. Wei, G. Tang, Z. Zhang, and K. J. Chen, “Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors, ” 2016 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’16), Prague, Czech Republic, Jun. 12-16, 2016.
  • J. Wei, H. Jiang, Q. Jiang, and K. J. Chen, “Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications, ” 2016 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’16), Prague, Czech Republic, Jun. 12-16, 2016.
  • S. Yang, L. Lei, K. Yu, A. Zhang, and K. J. Chen, ” Comparison of SiNx and AlN Passivations for AlGaN/GaN HEMTs, ” 229th ECS Meeting, San Diego, USA, May 29-Jun. 2, 2016.
  • M. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, “Compatibility of AlN/SiNx Passivation with High-Temperature Process,” CS MANTECH Conference, Hyatt Regency Miami, Florida, USA, May 16-19, 2016.

2015:

  • X. Tang, B. Li, Y. Lu, H. Wang, C. Liu, J. Wei, and K. J. Chen, “III-Nitride Transistors with Photonic-Ohmic Drain for Enhanced Dynamic Performances, ” 2015 Int. Electron Device Meeting (IEDM 2015), Washington, DC, USA, Dec. 7-9, 2015.
  • J. Wei, S. Liu, B. Li, X. Tang, Y. Lu, C. Liu, M. Hua, Z. Zhang, G. Tang, and K. J. Chen, “Enhancement-mode GaN Double-Channel MOS-HEMT with Low On-resistance and Robust Gate Recess, ” 2015 Int. Electron Device Meeting (IEDM 2015), Washington, DC, USA, Dec. 7-9, 2015.
  • (Invited) K. J. Chen, B. Li, X. Tang, and J. Wang, “Optoelectronic Devices on AlGaN/GaN HEMT Platform, ” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, “Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs, ” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • X. Tang, Q. Jiang, H. Wang, B. Li, and K. J. Chen, “Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform, ” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • S. Yang, Z. Tang, Y. Lu, A. Zhang, and K. J. Chen, “Differences between SiNx and AlN Passivations for AlGaN/GaN HEMTs: A Tcad-Simulation Based Study, ” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • S. Liu, S. Yang, C. Liu, Y. Lu and K. J. Chen, “High-Performance Gate-Recessed Normally-Off GaN MIS-HEMTs with Thin Barrier Layer,” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • H. Wang, C. Liu, Q. Jiang, Z. Tang, and K. J. Chen, “Hard Switching Characteristics of AlN-Passivated AlGaN/GaN on silicon MIS-HEMTs,” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • C. Liu, J. Wei, S. Liu, H. Wang, Z. Tang, S. Yang and K. J. Chen, “Improved High-Voltage Performance of Normally-Off GaN MIS-HEMTs Using Fluorine implanted Enhanced Back Barrier, ” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • X. Tang, B. Li, Y. Lu, and K. J. Chen, “On-Chip Addressable Schottky-on-Heterojunction Light-Emitting Diode Arrays on AlGaN/GaN-On-Si Platform, ” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • S. Lin, M. Wang, B. Xie, C. P. Wen, Min Yu, J. Wang, Y. Hao, W. Wu, B. Shen, and K. J. Chen, ” Reduction of the Current Collapse in GaN High Electron Mobility Transistors by a Novel Surface Treatment,” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • L. Yuan, X. Xiao, L. Tang, H. Li, Y. Jiang, K. J. Chen and A. Yen, ” First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line,” 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
  • (Invited) S. Yang, S. Liu, C. Liu, Y. Lu, and K. J. Chen, ” Nitridation interfacial-layer technology for enhanced stability in GaN-based power devices, ” 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2015), Sendai, Japan, Aug. 26-28, 2015.
  • (Keynote speach) K. J. Chen, “Technology Challenges of GaN Heterojunction Power Devices,” The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015), Seoul, Korea, May 17-20, 2015.
  • X. Tang, B. Li, and K. J. Chen, “Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using Schottky-on-Heterojunction Light Emitting Devices, ” 2015 Compound Semiconductor Week (CSW 2015), University of California Santa Barbara, CA, USA, June 28-July 2, 2015.
  • C. Liu, H. Wang, S. Yang, Y. Lu, S. Liu, Z. Tang, Q. Jiang, and K. J. Chen, “Improved Thermal Stabilities in Normally-off GaN MIS-HEMTs, ” CS MANTECH Conference, Scottsdale, Arizona, USA, May 18-21, 2015.
  • C. Liu, H. Wang, S. Yang, Y. Lu, S. Liu, Z. Tang, Q. Jiang, S. Huang, and K. J. Chen, “Normally-off GaN MIS-HEMT with Improved Thermal Stability in DC and Dynamic Performance, ” 2015 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’15), Hong Kong, China, May 10-14, 2015.
  • M. Hua, C. Liu, S. Yang, S. Liu, Y. Lu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, “650-V GaN-Based MIS-HEMTs Using LPCVD-SiNx as Passivation and Gate Dielectric, “ 2015 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’15), Hong Kong, China, May 10-14, 2015.
  • X. Tang, B. Li, and K. J. Chen, “On-chip Optical Pumping of Deep Traps in AlGaN/GaN-on-Si Power HEMTs,” 2015 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’15), Hong Kong, China, May 10-14, 2015.

2014:

  • S. Yang, S. Liu, C. Liu, Z. Tang, Y. Lu, and K. J. Chen, “Thermally Induced Threshold Voltage Instability of III-Nitride MIS-HEMTs and MOSC-HEMTs : Underlying Mechanisms and Optimization Schemes,” 2014 Int. Electron Device Meeting (IEDM 2014), San Francisco, CA, USA, Dec. 15-17, 2014.
  • B. Li, X. Tang, Q. Jiang, Y. Lu, H. Wang, J. Wang, and K. J. Chen, “Schottky-on-Heterojunction Optoelectronic Functional Devices Realized on AlGaN / GaN-on-Si Platform,” 2014 Int. Electron Device Meeting (IEDM 2014), San Francisco, CA, USA, Dec. 15-17, 2014.
  • S. Huang, Q. Jiang, K. Wei, G. Liu, J. Zhang, X. Wang, Y. Zheng, B. Sun, C. Zhao, H. Liu, Z. Jin, X. Liu, H. Wang, S. Liu, Y. Lu, C. Liu, S. Yang, Z. Tang, J. Zhang, Y. Hao, and K. J. Chen, “High-Temperature Low-Damage Gate Recess Technique and Ozone-Assisted ALD-grown Al2O3 Gate Dielectric for High-Performance Normally-Off GaN MIS-HEMTs, “2014 Int. Electron Device Meeting (IEDM 2014), San Francisco, CA, USA, Dec. 15-17, 2014.
  • (Invited) K. J. Chen, S. Yang, Z. Tang, and S. Huang, “Dielectric/III-N interfaces with nitridation interfacial-layer for GaN power electronics,” 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, USA, Dec. 10-13, 2014.
  • S. Yang, and K. J. Chen, “Nitridation Interfacial-Layer Technology: Enabling Low Interface Trap Density and High Stability in III-Nitride MIS-HEMTs,” 12th International Conferences on Solid-State and Integrated Circuit Technology (ICSICT2014), Guilin, China, Oct. 28-31, 2014.
  • (Invited) K. J. Chen, S. Yang, Z. Tang, S. Huang, Y. Lu, Q. Jiang, S. Liu, C. Liu, and B. Li, “Surface Nitridation for Improved Dielectric/III−Nitride Interfaces in GaN MIS−HEMTs,” 8th International Workshop on Nitride Semiconductors (IWN 2014), Wrocław, Poland, August 24-29, 2014.
  • S. Liu, S. Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and K. J. Chen, “Interface Characterization of Normally−Off Al2O3/AlN/GaN MOS−Channel− HEMTs with an AlN Interfacial Layer,” 8th International Workshop on Nitride Semiconductors (IWN 2014), Wrocław, Poland, August 24-29, 2014.
  • Y. Lu, B. Li, X. Tang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Investigation of Gate Degradation in Al2O3−AlGaN/GaN MIS−HEMTs using Transparent Gate Electrode,” 8th International Workshop on Nitride Semiconductors (IWN 2014), Wrocław, Poland, August 24-29, 2014.
  • H. Wang, A. M. H. Kwan, Q. Jiang, and K. J. Chen, “A GaN Pulse Width Modulation Integrated Circuit,” 2014 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’14), Waikoloa, Hawaii, USA, June 15-19, 2014.
  • S. Liu, S. Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and K. J. Chen, “Performance Enhancement of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD- Grown AlN Interfacial Layer,” 2014 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’14), Waikoloa, Hawaii, USA, June 15-19, 2014.
  • M. Wang, Y. Wang, C. Zhang, C. P. Wen, J. Wang, Y. Hao, W. Wu, B. Shen, and K. J. Chen, “Normally-Off Hybrid Al2O3/GaN MOSFET on Silicon Substrate Based on Wet-Etching,” 2014 International Symposium on Power Semiconductor Devices and ICs (ISPSD’14), Waikoloa, Hawaii, USA, June 15-June19, 2014.
  • Z. Tang, S. Huang, and K. J. Chen, “Stability and Temperature Dependence of Dynamic RON in AlN-Passivated AlGaN/GaN HEMT on Si Substrate,” CS MANTECH Conference, Denver, Colorado, USA, May 19-22, 2014. (Best student paper award)
  • A. Zhang, L. Zhang, Z. Tang, X. Cheng, Y. Wang, K. J. Chen, and M. Chan, “Analytical Modeling for AlGaN/GaN HEMTs,” The 11th International Workshop on Compact Modeling (IWCM 2014), Singapore, Jan. 23, 2014.

2013:

  • S. Yang, Z. Tang, K. Wong, Y. Lin, S. Huang, and K. J. Chen, “Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques,” 2013 Int. Electron Device Meeting (IEDM 2013), Washington, DC, USA, Dec. 9-11, 2013.
  • Z. Tang, Q. Jiang, S. Huang, Y. Lu, S. Yang, C. Liu, X. Tang, S. Liu, B. Li, and K. J. Chen, “Monolithically Integrated 600-V E/D-Mode SiNx/AlGaN/GaN MIS-HEMTs and Their Applications in Low-Standby-Power Start-Up Circuit for Switched-Mode Power Supplies,” 2013 Int. Electron Device Meeting (IEDM 2013), Washington, DC, USA, Dec. 9-11, 2013.
  • (Invited talk) K. J. Chen, “Toward GaN-based Power Integrated Circuits,” The 2nd Int. Conf. on Advanced Electromaterials (ICAE 2013), Nov. 12-15, 2013, ICC Jeju, Korea.
  • C. Liu, S. Liu, S. Huang, B. Li, and K. J. Chen, “AlN/GaN heterostructure TFTs with the polarized AlN barrier grown by 300 oC plasma enhanced atomic layer epitaxy,” 10th Topical Workshop on Heterostructure Microelectronics (TWHM-10), Sep. 2-5, 2013, Hakodate, Japan.
  • (Invited talk) K. J. Chen, Technologies for III-N Heterogeneous Mixed-signal Electronics,” 10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug. 25-30, 2013.
  • B. Li, K. J. Chen, Q. Jiang, S. Liu, and C. Liu “Degradation of OFF-state leakage current in AlGaN/GaN HEMTs induced by an ON-state gate overdrive,” 10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug. 25-30, 2013. (Outstanding poster award)
  • S. Yang, J. Lu, S. Huang, C. Zhou, B. Huang, and K. J. Chen, “GaN Buffer Traps in GaN-on-Si Structure Studied by Thermally Stimulated Current and Back-Gating Measurements,” 10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug. 25-30, 2013.
  • S. Huang, K. Wei, X. Liu, G. Liu, B. Shen, and K. J. Chen, “Improved High-Temperature Stability of 2DEG Channel in AlGaN/GaN Heterostructures by PEALD-grown AlN Thin Film Passivation,” 10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug. 25-30, 2013.
  • S. Yang, Q. Jiang, B. Li, Z. Tang and K. J. Chen, “GaN-to-Si Vertical Conduction Mechanisms in AlGaNjGaN-on-Si Lateral Heterojunction FET Structures,” 10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug. 25-30, 2013.
  • C. Liu, S. Liu, S. Huang, B. Li, and K. J. Chen, “AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film,” 10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug. 25-30, 2013.
  • Y. Wang, M. Wang, B. Xie, J. Wang, Y. Hao, W. Wu, B. Shen, and K. J. Chen, “High Performance Normally-Off AlGaN/GaN MOSFET with Al2O3 High-k Dielectric Layer Using a Low Damage Recess Technique,” 10th Int. Conf. on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug. 25-30, 2013.
  • Q. Jiang, C. Liu, Y. Lu, and K. J. Chen, “High-voltage enhancement/depletion-mode AlGaN/GaN HEMTs on modified SOI substrates,” 2013 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’13), May 26-30, 2013, Kanazawa, Japan. (Charitat Award: for the best Young Researcher)
  • Z. Tang, S. Huang, Q. Jiang, S. Liu, C. Liu, and K. J. Chen, “600 V high-performance AlGaN/GaN HEMTs with AlN/SiNx passivation,” 2013 Compound Semiconductor Manufacturing Technology Conference CS MANTECH, Boston, USA, Apr. 23-26, 2012. (Best student paper award)
  • Z. Tang, S. Huang, Q. Jiang, S Liu, C. Liu, and K. J. Chen, “600V 1.3mΩ∙cm2 Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation,” 2013 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’13), May 26-30, 2013, Kanazawa, Japan.
  • Q. Zhou, W. Chen, S. Liu, B. Zhang, Z. Feng, S. Cai, and K. J. Chen, “High Breakdown Voltage InAlN/AlN/GaN HEMTs Achieved by Schottky-Source Technology,” 2013 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’13), May 26-30, 2013, Kanazawa, Japan.
  • (Invited talk) K. J. Chen, “Device technology for GaN mixed-signal integrated circuits,” 5th Int. Symp. On Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), Jan. 28-Feb. 1, 2013, Nagoya University, Japan.

2012:

  • A. M. H. Kwan, X. Liu, and K. J. Chen, “Integrated gate-protected HEMTs and mixed-signal functional blocks for GaN smart power ICs,” 2012 Int. Electron Device Meeting (IEDM2012), San Francisco, USA, Dec. 10-12, 2012.
  • (Invited talk) K. J. Chen, L. Yuan, and H. Chen, “AlGaN/GaN metal-2DEG tunnel junction FETs with normally-off operation, high on-state current and low off-state leakage,” 2012 IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT2012), Xi’an, CHINA, Oct. 29- Nov. 1, 2012.
  • A. M. H. Kwan, Y. Guan, X. Liu, and K. J. Chen, “Over-temperature protection integrated circuit for GaN smart power ICs,” 2012 Int. Workshop on Nitride Semiconductors (IWN2012), Oct. 14-19, 2012, Sapporo, Japan.
  • (Invited talk) S. Yang, S. Huang, Q. Zhao, and K. J. Chen, “Enhancement-mode AlGaN/GaN MISHEMTs with fluorinated high-k LaLuO3 gate dielectric,” 2012 Int. Workshop on Nitride Semiconductors (IWN2012), Oct. 14-19, 2012, Sapporo, Japan.
  • S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs,” 2012 Int. Workshop on Nitride Semiconductors (IWN2012), Oct. 14-19, 2012, Sapporo, Japan.
  • X. Liu, C. Zhan, K. W. Chan, W. Liu, L. S. Tan, K. J. Chen and Y.-C. Yeo, “AlGaN/GaN-on-Sapphire MOS-HEMTs with breakdown voltage of 1400 V and on-state resistance of 22 mW∙cm2 using a CMOS-compatible gold-free process,” 2012 International Conference on Solid State Device and Materials (SSDM2012), Kyoto, Japan, Sep. 25-27, 2012.
  • C. Zhou, Q. Jiang, S. Huang, and K. J. Chen, “Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structure,” 2012 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’12), Bruges, Belgium. June 4-7, 2012.
  • S. Huang, Q. Jiang, S. Yang, C. Zhou, and K. J. Chen, “ALD-grown ultrathin AlN film for passivation of AlGaN/GaN HEMTs,” 2012 CS MANTECH, Boston, USA, Apr. 23-26, 2012.
  • X. Liu, C. Zhan, K. W. Chan, W. Liu, L. S. Tan, K. J. Chen and Y.-C. Yeo, “AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm2 using a CMOS-Compatible Gold-Free Process,” 2012 Int. Symp. on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 23-25, 2012.
  • (Invited) K. J. Chen, “Fluorine Plasma Ion Implantation: A GaN Normally-off HEMT Technology” 4th Int. Symp. On Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2012), Aichi, Japan, Mar. 4-8, 2012.

2011:

  • (Invited) K. J. Chen, L. Yuan, M.J. Wang*, H. Chen, S. Huang*, C. Zhou, Q. Zhou, B.K. Li, J. N. Wang, “Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology”, 2011 Int. Electron Device Meeting (IEDM), Washington D. C., USA, Dec. 4-7, 2011.
  • Q. Zhou, S. Huang*, H. Chen, C. Zhou, Z. Feng, S. Cai, K. J. Chen, “Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio”,2011 Int. Electron Device Meeting (IEDM), Washington D. C., USA, Dec. 4-7, 2011.
  • Qi Zhou, Hongwei Chen, Chunhua Zhou, Z.H. Feng, S.J. Cai and K. J. Chen, “InAlN/AlN/GaN Schottky source/drain MIS-HEMT with high breakdown voltage,” 2011 Int. Conf. on Solid-State Devices and Materials (SSDM2011), Nagoya, Japan, Sep. 28-30, 2011.
  • S. Huang, S. Yang, J. Roberts, and K. J. Chen, “Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement,” 9th Int. Conf. on Nitride Semiconductors (ICNS-9), Glasgow, UK, July 10-15, 2011
  • H. Chen, L. Yuan, Q. Zhou, C. Zhou, and K. J. Chen, “Normally-off AlGaN/GaN Power Tunnel-Junction FETs,” 9th Int. Conf. on Nitride Semiconductors (ICNS-9), Glasgow, UK, July 10-15, 2011.
  • Q. Zhou, H. Chen, C. Zhou, Z. Feng, S. J. Cai, and K. J. Chen, “Observation of Trap-Assisted Steep Sub-Threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT,” 69th Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011.
  • J. Fu, L. Yobas, and K.J. Chen, “Stealth electrode dielectrophoresis: Microsphere manipulation by patterned 2-Dimensional Electron Gas (2-DEG) in AlGaN/GaN heterostructures,” The 3rd International Symposium on Microchemistry and Microsystems (ISMM), Seoul, Korea, June 2-4, 2011, Abstract: F3-056.
  • L. Yuan, H. Chen, Q. Zhou, C. Zhou, and K. J. Chen, “A novel normally-off GaN power tunnel junction FET,” The 23rd Int. Symp. on Power Semiconductor Devices and ICs (ISPSD’11), San Diego, USA, May 23-26, 2011.
  • J. N. Lv, Z. C. Yang, G. Z. Yan, Y. Cai, B. S. Zhang, and K. J. Chen, “Characterization of GaN cantilevers fabricated with GaN-on-Si platform,” IEEE MEMS 2011. Jan. 23-27, 2011, Cancun, Mexico.
  • (Invited) K. J. Chen, “Role of Fluorine Plasma Ion Implantation in GaN Electron Devices,” SPIE Photonics West Conference, OPTO, San Francisco, USA, Jan. 22-27, 2011.

2010:

  • C. Ma, H. Chen, C. Zhou, S. Huang, L. Yuan, J. Roberts, and K. J. Chen, “Reliability of Enhancement-mode AlGaN/GaN HEMTs under ON-state Gate Overdrive,” 2010 Int. Electron Device Meeting (IEDM), San Francisco, USA, Dec. 4-7, 2010.
  • (Invited) K. J. Chen and C. Zhou “GaN Smart Discrete Power Devices,” The 10th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08), Shanghai, China, Nov. 1-4, 2010.
  • (Invited) K. J. Chen, “GaN Smart Power IC Technologies,” IEEE University Government Industry Micro/Nano Symposium (UGIM 2010), Purdue University, West Lafayette, IN, USA, June 28-July 1, 2010.
  • (Invited) K. J. Chen, “Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology,” The 37th Int. Symp. On Compound Semiconductors (ISCS2010), Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010.
  • A. M. H. Kwan, K. -Y. Wong, X. Liu, and K. J. Chen, “High-Gain and High-Bandwidth AlGaN/GaN HEMT Comparator,” 2010 Int. Conf. on Solid-State Devices and Materials (SSDM2010), Tokyo, Japan, Sep. 22-24, 2010.
  • J. Fu and K. J. Chen, “Microspheres manipulation and sensing system by AlGaN/GaN 2DEG,” Int. Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, USA, Sep. 19-24, 2010. (oral presentation)
  • S. Huang, H. Chen, and K. J. Chen, “Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlGaN/GaN heterostructures,” Int. Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, USA, Sep. 19-24, 2010. (oral presentation)
  • B. K. Li, M. J. Wang*, K. J. Chen, J. N. Wang, “Electroluminescence from forward biased Ni/Au-AlGaN/GaN Schottky diodes,” The 30th Int. Conf. on the Physics of Semiconductors (ICPS 2010), Seoul, Korea, July 25-30, 2010. (oral presentation)
  • H. Chen, M. Wang*, and K. J. Chen, “Self-Aligned Enhancement-mode AlGaN/GaN HEMTs Using 25 keV Fluorine Ion Implantation,” The 68th Device Research Conference (DRC10), University of Notre Dame, South Bend, Indiana, USA, June 21-23, 2010.
  • C. Zhou, W. J. Chen*, E. L. Piner, and K. J. Chen, “Self-Protected GaN Power Devices with Reverse Drain Blocking and Forward Current Limiting Capabilities,” The 22nd Int. Symp. on Power Semiconductor Devices and ICs (ISPSD’10), Hiroshima, Japan, June 6-10, 2010 (Charitat Award: for the best Young Researcher)
  • C. Zhou, W. J. Chen*, E. L. Piner, and K. J. Chen, “AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punch-through Breakdown Immunity and Low On-Resistance,” 2010 Int. Conf. on Compound Semiconductor Manufacturing Technology (CS MANTECH), Portland, Oregon, USA, May 7-10, 2010.
  • H. Chen, M. Wang*, and K. J. Chen, “Enhancement-mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation,” 2010 Int. Conf. on Compound Semiconductor Manufacturing Technology (CS MANTECH), Portland, Oregon, USA, May 7-10, 2010.
  • J. N. Lv, Z.C. Yang, G.Z. Yan, Y. Cai, B.S. Zhang and K.J. Chen, “Residual Stress Characterization of GaN Microstructures Using Bent-Beam Strain Sensors,” The 5th Annual IEEE Int. Conf. on Nano/Micro Engineering and Molecular Systems (IEEE-NEMS 2010), Xiamen, China, Jan. 20-23, 2010.

2009:

  • (Invited) K. J. Chen, K. -Y. Wong, W. J. Chen, C. Zhou, and X. Liu, “Device Technology Platform for GaN Smart Power ICs,” 2009 Int. Electron Device and Material Symposium (IEDMS2009), Taoyuan, Taiwan, Nov. 18-21, 2009.
  • B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Femi level depinning at Ni/AlGaN interface,” 8th Int. Conf. on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct. 18-23, 2009.
  • K. -Y. Wong, W. J. Chen, X. Liu, C. Zhou, and K. J. Chen, “GaN Smart Power IC Technology,” 8th Int. Conf. on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct. 18-23, 2009.
  • M. J. Wang, K. J. Chen, C. Cheng, C. D. Beling, and S. Fung, “Modulation of Polarization Induced Electric Field by Fluorine Ions in AlGaN/GaN Heterostructures Revealed by Positron Annihilation Spectroscopy,” 8th Int. Conf. on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct. 18-23, 2009.
  • K. -Y. Wong, W. J. Chen, and K. J. Chen, “GaN Zero-Bias RF Mixer Using a Lateral Field-Effect Rectifier,” 2009 Int. Conf. on Solid-State Devices and Materials (SSDM2009), Sendai, Miyagi Japan, Oct. 7-9, 2009.
  • Q. Zhou, K. -Y. Wong, W. J. Chen, and K. J. Chen, “Zero-Bias Microwave Detectors Using AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifier (L-FER),” 8th Topical Workshop on Heterostructure Microelectronics (TWHM2009), Mielparque-Nagano, Nagano, Japan, Aug. 25-28, 2009.
  • K. -Y. Wong, W. J. Chen, and K. J. Chen, “Integrated Voltage Reference and Comparator Circuits for GaN Smart Power Chip Technology,” 2009 Int. Symp.. on Power Semiconductor Devices and ICs (ISPSD’09), Barcelona, Spain, June 14-17, 2009. (Charitat Award: for the best Young Researcher)
  • K. -Y. Wong, W. J. Chen, and K. J. Chen, “Wide Bandgap GaN Smart Power Chip Technology,” 2009 Int. Conf. on Compound Semiconductor Manufacturing Technology (CS Matech’09), Tampa, Florida, USA, May 18-21, 2009.

2008:

  • W. Chen, K. -Y. Wong, and K. J. Chen, “Monolithic Integration of Lateral Field Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters,” 2008 Int. Electron Device Meeting (IEDM08), San Francisco, USA, Dec. 15-17, 2008.
  • M. Wang and K. J. Chen, “Source Injection Induced Off-State Breakdown and Its Improvement by Enhanced Back Barrier with Fluorine Ion Implantation in AlGaN/GaN HEMTs,” 2008 Int. Electron Device Meeting (IEDM08), San Francisco, USA, Dec. 15-17, 2008.
  • L. Yuan, M. Wang, and K. J. Chen, “Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors,” 2008 Int. Electron Device Meeting (IEDM08), San Francisco, USA, Dec. 15-17, 2008.
  • (Invited) K. J. Chen, “Threshold Voltage Control in AlGaN/GaN HEMTs by Fluorine Plasma Ion Implantation: From Normally-ON to Normally-OFF,” 15th National Conference on Compound Semiconductor: Materials, Microwave and Optoelectronic Devices, Guangzhou, China, Dec. 1-2, 2008.
  • (Invited) K. J. Chen, “Fluorine Plasma Ion Implantation (Treatment) Technology: a New Dimension in GaN Electronic Device Processing,” The 9th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08), Beijing, China, Oct. 20-23, 2008.
  • W. Chen, K. -Y. Wong, W. Huang, and K. J. Chen, “High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs using CF4 Plasma Treatment,” The 9th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08), Beijing, China, Oct. 20-23, 2008.
  • L. Yuan, M. Wang, and K. J. Chen, “Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures,” The 9th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08), Beijing, China, Oct. 20-23, 2008.
  • W. Chen, K. -Y. Wong, and K. J. Chen, “HEMT-Compatible Lateral Field Effect Rectifier Using CF4 Plasma Treatment,” 2008 Int. Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008.
  • M. Wang, L. Yuan, F. Xu, B. Shen, and K. J. Chen, “Study of Diffusion and Thermal Stability of Fluorine Ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy,” 2008 Int. Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008.
  • L. Yuan, M. Wang, and K. J. Chen, “On the Stability of Fluorine Ions in AlGaN/GaN Heterostructures: a Molecular Dynamics Simulation Study,” 2008 Int. Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008.
  • K. -Y. Wong, W. Chen, and K. J. Chen, “High Temperature Performance of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier,” 2008 Int. Conf. Solid-State Devices and Materials (SSDM08), Tsukuba, Japan, Sep. 23-26, 2008.
  • L. Yuan, M. Wang,and K. J. Chen, “On the Stability of Fluorine Ions in AlGaN/GaN System: A Theoretical Study,” 2008 Int. Conf. Solid-State Devices and Materials (SSDM08), Tsukuba, Japan, Sep. 23-26, 2008.
  • W. Chen, W. Huang, K. Y. Wong, and K. J. Chen, “High-Performance AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifiers,” 66th Device Research Conference (DRC), Santa Barbara, California, USA, June 22-25, 2008.
  • J. Lv, Z. Yang, and K. J. Chen, “Fabrication of Suspending GaN Microstructures with Combinations of Anisotropic and Isotropic Dry Etching Techniques,” Proc. Of ASME Nano08, Clear Water Bay, Hong Kong, Kowloon, Hong Kong, June 3-5, 2008.
  • (Invited) K. J. Chen, “Core Technologies for III-Nitride Integrated Microsensors,” 2008 HKUST Nanotechnology Workshop, HKUST, Jan 23-25, 2008.

2007:

  • C. Yi, R. Wang, W. Huang, T. C. -W. Tang, K. M. Lau, and K. J. Chen, “Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment,” 2007 International Electron Device Meeting (IEDM07), Washington D. C., USA, Dec. 10-12, 2007.
  • B. K. Li, K. J. Chen, K. M. Lau, W. Ge, and J. N. Wang, “Characterization of Fluorine-Plasma Induced Deep Centers in AlGaN/GaN Heterostructures,” 7th Int. Conf. Nitride Semiconductors (ICNS-7), Sep. 16-21, 2007, Las Vegas, Nevada, USA.
  • R. Wang, Y. C. Wu, W. C. -W. Tang, K. M. Lau, and K. J. Chen, “Gain Improvement of Enhancement-mode AlGaN/GaN HEMT using Dual-gate Architectures,” 2007 Int. Conf. Solid-State Devices and Materials (SSDM07), Tsukuba, Japan, Sep. 18-21, 2007.
  • K. Y. Wong, W. C. -W. Tang, K. M. Lau, and K. J. Chen, “Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructures,” IEEE-NANO 2007, Hong Kong, Aug. 2-5, 2007.
  • C. Wang, Z. Yang, B. Zhang, Y. Wang, H. Wang, K. M. Lau, and K. J. Chen, “Fabrication of Vertical Position-Controlled GaN Nanowires on (111) Si Substrate,” IEEE-NANO 2007, Hong Kong, Aug. 2-5, 2007
  • J. Liu, D. Song, Z. Cheng, W. C. -W Tang, K. M. Lau, and K. J. Chen, “Microwave Noise Characterization of Enhancement-mode AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs,” IEEE 65th Device Research Conference, South Bend, Indiana, USA, June 18-20, 2007, pp. 77-78.
  • D. Song, J. Liu, Z. Cheng, W. C. -W. Tang, K. M. Lau, and K. J. Chen, “Normally-off AlGaN/GaN Low-Density-Drain HEMTs (LDD-HEMT) with Enhanced Breakdown Voltage and Suppressed Current Collapse,” IEEE 19th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD’07), Jeju, Korea, May 27-30, 2007, pp. 257-260.
  • J. Zhang, H. Zhang, K. J. Chen, S. G. Lu, and Z. Xu, “Microwave Performance Dependence of BST Thin Film Planar Interdigitated Varactors on Different Substrate,” IEEE Int. Conf. on Nano/Micro Engineering and Molecular Systems (IEEE-NEMS 2007), Bangkok, Thailand, Jan. 16-19, 2007.
  • Z. Yang, B. Zhang, K. M. Lau, and K. J. Chen, “Fabrication of Position-Controllable GaN Nanostructures,” IEEE Int. Conf. on Nano/Micro Engineering and Molecular Systems (IEEE-NEMS 2007), Bangkok, Thailand, Jan. 16-19, 2007.

2006:

  • R. N. Wang, Y. Cai, Z. Cheng, C. W. Tang, K. M. Lau, and K. J. Chen. “A Planar Integration Process for E/D-mode AlGaN/GaN HEMT DCFL Integrated Circuits,” 2006 IEEE Compound Semiconductor IC Symposium, San Antonio, USA, Nov. 12-15, 2006.
  • R. N. Wang, Y. Cai, Z. Cheng, C.-W. Tang, K. M. Lau, and K. J. Chen, “Enhancement-Mode AlGaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique” Int. Workshop on Nitride Semiconductors (IWN2006), Kyoto, Japan, Oct. 22-27, 2006.
  • Z. Yang, B. Zhang, K. M. Lau, and K. J. Chen, “SiN-Masked GaN-on-Patterned-Silicon (GPS) Technique for fabrication of suspended GaN microstructures.” The 8th Int. Conf. Solid-State and Integrated-Circuit Technology (ICSICT-2006), Shanghai, China, Oct. 23-26, 2006.
  • J. W. Zhang, Wai Cheong Hon, Lydia L. W. Leung, and K. J. Chen, “Fabrication of Edge-Suspended Microwave Passive Components using CMOS-Compatible Micromachining,”The 8th Int. Conf. Solid-State and Integrated-Circuit Technology (ICSICT-2006), Shanghai, China, Oct. 23-26, 2006.
  • K.-Y. Wong, W.-Y. Tam, and K. J. Chen, “Analysis of SAW Filter Fabricated on Anisotropic Substrate Using Finite-Difference Time-Domain Method,” IEEE Ultrasonics Symposium, Vancouver, Canada, Oct. 2-6, 2006. (oral presentation)
  • K.-Y. Wong, W. C. W. Tang, K. M. Lau, and K. J. Chen, “Planar Integration of SAW Filter with HEMT on AlGaN/GaN Heterostructure Using Fluoride-based Plasma Treatment,” IEEE Ultrasonics Symposium, Vancouver, Canada, Oct. 2-6, 2006. (oral presentation).
  • Y. Cai, Z. Q. Cheng, W. C. -W. Tang, K. M. Lau, and K. J. Chen, “GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375 oC,” 2006 Int. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan, Sep. 12-15, 2006.
  • R. Wang, Y. Cai, C. -W. Tang, K. M. Lau, and K. J. Chen, “Device Isolation by Plasma Treatment for Planar Integration of E/D-mode AlGaN/GaN HEMTs,” 2006 Int. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan, Sep. 12-15, 2006.
  • H. Zhang and K. J. Chen, “A Microstrip Bandpass Filter with an Electronically Reconfigurable Transmission Zero,” 2006 European Microwave Conference (EUMW2006), Manchester, U. K., Sep. 10-15, 2006.
  • (Invited) K. J. Chen and K. M. Lau, “Core Technologies for III-Nitride Integrated Microsensors,” 6th Emerging Information Technology Conference (EITC’06), Richardson, Texas, USA, Aug. 10-13, 2006.
  • L. L. W. Leungand K. J. Chen, “Compact On-Chip Three-Dimensional Electromagnetic Bandgap Structure,”2006 IEEE International Microwave Symposium (IMS2006), San Francisco, USA, June 6-11, 2006.
  • C-W. Tang, L. Jiang, K. M. Lau, and K. J. Chen, “MOCVD Grown Metamorphic InAlAs/InGaAs HEMTs on GaAs Substrates,” 2006 Int. Conf. Compound Semiconductor Manufacturing Technology (MANTECH’06), Vancouver, Canada, Apr. 24-27, 2006, pp. 243-245.

2005:

  • Z. Yang, R. Wang, D. Wang, B. Zhang. K. J. Chen, and K. M. Lau, “GaN on Patterned Silicon (GPS) Technique for GaN based Integrated Microsensors,” 2005 International Electron Device Meeting (IEDM05), Washington D. C., USA, Dec. 4-7, 2005.
  • Y. Cai, Z. Cheng, C. W. Tang, K. J. Chen, and K. M. Lau, “Monolithic Integration of Enhancement- and Depletion-mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits,” 2005 International Electron Device Meeting (IEDM05), Washington D. C., USA, Dec. 4-7, 2005.
  • Z. Cheng, Y. Cai, J. Liu, Y. G. Zhou, K. M. Lau, and K. J. Chen, “Monolithic Integrated C-band Low Noise Amplifier Using AlGaN/graded-AlGaN/GaN HEMTs,” Proceeding of 2005 Asia-Pacific Microwave Conference (APMC2005), Suzhou, China, Dev. 4-7, 2005.
  • H. Zhangand K. J. Chen, “Compact Bandpass Filters Using Slow-Wave Coplanar Waveguide Tri-Section Stepped Impedance Resonators,” Proceeding of 2005 Asia-Pacific Microwave Conference (APMC2005), Suzhou, China, Dev. 4-7, 2005.
  • H. Zhang, J. W. Zhang, L. L. W. Leung, and K. J. Chen, “Bandpass and Bandstop Filters Using CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides,” Proceeding of 2005 Asia-Pacific Microwave Conference (APMC2005), Suzhou, China, Dev. 4-7, 2005.
  • J. Liu, Y. G. Zhou, J. Zhu, K. J. Chen, and K. M. Lau, “AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch,” 6th Int. Conf. on Nitride Semiconductors, (ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005.
  • Z. Yang, R. Wang, S. Jia, D. Wang, B. Zhang, K. J. Chen, and K. M. Lau, “Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique,” 6th Int. Conf. on Nitride Semiconductors, (ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005.
  • J. Zhu, J. Liu, Y. G. Zhou, Y. Cai, K. J. Chen, and K. M. Lau, “Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT,”6th Int. Conf. on Nitride Semiconductors, (ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005.
  • S. Jia, Y. Cai, D. Wang, B. Zhang, K. J. Chen, and K. M. Lau, “Enhancement-Mode AlGaN/GaN HEMTs on Silicon Substrate,”6th Int. Conf. on Nitride Semiconductors, (ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005.
  • Z. Feng, S. J. Cai, K. J. Chen, and K. M. Lau, “AlGaN/GaN HEMTs on Grooved Sapphire Substrate,”6th Int. Conf. on Nitride Semiconductors, (ICNS-6), Bremen, Germany, Aug. 28-Sep. 2, 2005.
  • Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, “Enhancement-mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage,”6th Topical Workshop on Heterostructure Microelectronics, (TWHM2005), Awaji Island, Hyogo, Japan, Aug. 22-25, 2005.
  • K. J. Chen, J. Liu, Y. G. Zhou, and K. M. Lau, “Channel Engineering of III-Nitride HEMTs for Enhanced Device Performance,” 2005 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD05), Seoul, Korea, June 27-29, 2005.
  • Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, “Threshold Voltage Control of AlGaN/GaN HEMTs by CF4 Plasma Treatment,” 2005 Electronic Material Conference (EMC2005), Santa Barbara, California, USA, June 22-24, 2005.
  • M. Chen, W. Zhou, J. Zhu, Y. Cai, W. C. K. Tang, K. J. Chen, and K. M. Lau, “Metamorphic InP/GaAsSb/InP HBTs on GaAs substrate by MOCVD,” 2005 Electronic Material Conference (EMC2005), Santa Barbara, California, USA, June 22-24, 2005.
  • Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, “Self-Aligned Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-based Plasma Treatment,” 63rd Device Research Conference (DRC), Santa Barbara, California, USA, June 20-22, 2005.
  • Z. Yang, S. Jia, R. Wang, D. Wang, K. J. Chen, and K. M. Lau, “GaN on Patterned Silicon (GPS) Technique for Fabrication of GaN-based MEMS,” 13th Int. Conf. Solid-State Sensors, Actuators, and Microsystems (TRANSDUCERS’05), Seoul, Korea, June 5-9, 2005.
  • C. S. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, “A novel RF High-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure,” 2005 IEEE Radio-Frequency Integrated Circuit Symposium (RFIC2005), Long Beach, USA, June 12-14, 2005.

2004:

  • J. Liu, Y. G. Zhou, R. M. Chu, Y. Cai, K. J. Chen, and K. M. Lau,”Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs with Enhanced Linearity,” 2004 International Electron Device Meeting (IEDM04), San Francisco, USA, Dec. 13-15, 2004.
  • S. Jia, K. K. P. Tsui, X. P. Liao, and K. J. Chen, “Characterization and modeling of a step-gate-oxide MOSFET for RF power amplifiers,” The 7th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT2004), Beijing, China, Oct. 18-21, 2004.
  • J. -W. Zhang, W. C. Hon, L. L. W. Leung, and K. J. Chen, “Fabrication of edge-suspended microwave passive components using CMOS-compatible micromachining,” The 7th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT2004), Beijing, China, Oct. 18-21, 2004.
  • C. S. Chu, Y. G. Zhou, R. M. Chu, K. J. Chen, and K. M. Lau, “GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors,” The 7th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT2004), Beijing, China, Oct. 18-21, 2004.
  • M. Wong, N. Fok, N. Fan, K. W. Chan, and K. J. Chen, “High-performance low-cost embedded inductors using thin array plastic packaging (TAPP) for RF/microwave applications”, 2004 European Microwave Conference (EuMW2004), Amsterdam, Netherland, Oct. 12-14, 2004.
  • L. L. W. Leung, J. -W. Zhang, W. C. Hon, and K. J. Chen, “High-performance CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate,” 2004 European Microwave Conference (EuMW2004), Amsterdam, Netherland, Oct. 12-14, 2004.
  • J. -W. Zhang, W. C. Hon, L. L. W. Leung, and K. J. Chen, “High-performance edge-suspended spiral inductors and CPWs on CMOS-grade silicon substrates,”2004 International Conference on Microwave and Millimeter Wave Technology (ICMMT2004), Beijing, China, Aug. 18-21, 2004.
  • Y. G. Zhou, R. M. Chu, J. Liu, K. J. Chen, and K. M. Lau, “Gate Leakage in AlGaN/GaN HEMTs and its Suppression by Optimization of MOCVD Growth,” 2004 International Workshop on Nitride Semiconductors, Pittsburgh, Pennsylvania, USA, July 19-23, 2004.
  • R. M. Chu, Y. G. Zhou, J. Liu, K. J. Chen, and K. M. Lau, “Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT,” 2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25, 2004.
  • D. Wang, S. Jia, K. J. Chen, K. M. Lau, Y. Dikme, P. van Gemmern, Y. C. Lin, and M. Heuken “Quantitative Stress Characterization in GaN Films grown on patterned Si (111) by Micro-Raman Spectroscopy,” 2004 Electronic Material Conference (EMC2004), Notre Dame, Indiana, USA, June 23-25, 2004.
  • W. C. Hon, J. -W. Zhang, L. L. W. Leung, and K. J. Chen, “High-Q CMOS-Compatible Micromachined Edge-suspended Inductors,”2004 IEEE Radio Frequency Integrated Circuits Symposium (RFIC2004), Fort Worth, TX, USA, June 6-8, 2004.
  • L. L. W. Leung and K. J. Chen, “Microwave Characterization of High Aspect Ratio Through-Wafer Interconnect Vias in Silicon substrates,”2004 IEEE International Microwave Symposium (IMS2004), Fort Worth, Texas, USA, June 6-11, 2004.
  • D. Wang, Y. Dikme, S. Jia, P. van Gemmern, Y. C. Lin, K. J. Chen, K. M. Lau, and M. Heuken “Characterization of GaN grown on patterned Si (111) substrate,” 12th Int. Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XII), Maui, Hawaii, USA, May 30-June 4, 2004.

2003:

  • T. Suligoj, H. Liu, J. K. O. Sin, K. Tsui, K. J. Chen, P. Biljanovic, and K. L. Wang, “A Low-Cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs,”IEEE Int. Semiconductor Device Research Symposium, Washington D. C., Dec. 10-12, 2003.
  • L. L. W. Leung, W. C. Hon, and K. J. Chen, “Low-loss CPW Interconnects on Low-resistivity Silicon Substrate,” Proceeding of 2003 Asia-Pacific Microwave Conference (APMC2003), pp. 1875-1878, Seoul, Korea, Nov. 4-7, 2003.
  • L. L. W. Leung, T. W. Chen, S. W. Wong, M. H. Chan, and K. J. Chen, “A 2 GHz Single-chip Lumped-element Impedance Matching Network for RF Power Amplifiers on Standard Silicon Substrate,” Proceeding of 2003 Asia-Pacific Microwave Conference (APMC2003), pp. 1836-1839, Seoul, Korea, Nov. 4-7, 2003.
  • B. P. Yan, E. S. Yang, Y. F. Yang, X. Q. Wang, K. K. P. Tsui, and K. J. Chen, “RF Large Signal Characterization of InGaP/GaAs Power Heterostructure-emitter Bipolar Transistors,” Proceeding of 2003 Asia-Pacific Microwave Conference (APMC2003), pp. 209-212, Seoul, Korea, Nov. 4-7, 2003.
  • X. Huo, G. W. Xiao, K. J. Chen, and P.C. H. Chan, “System-on-Organic Integration of a 2.4 GHz VCO Using High Q Copper Inductors and Solder-bumped Flip Chip Technology,” Proceeding of 2003 IEEE Custom Integrated Circuits Conference (CICC2003), San Jose, California, USA, Sep. 21-24, 2003, pp. 537-540.
  • Y.G. Zhou, R. M. Chu, K. J. Chen, and K. M. Lau, “AlGaN/GaN/Graded-AlGaN double heterostructure HEMT,” 2003 Int. Conf. Solid-State Devices and Materials (SSDM2003), Tokyo, Japan, Sep. 16-18, 2003, pp. 918-919.
  • R. M. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, “Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors,” 2003 Electronic Material Conference (EMC2003), Salt Lake City, Utah, USA, June 25-27, 2003, p.85.
  • R. M. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, “Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures,” 5th Int. Conf. on Nitride Semiconductors, Nara, Japan, May 25-30, 2003, p. 275.
  • X.P. Liao, K. Tsui, H. Liu, K. J. Chen, and J. K. O. Sin, “A Step-Gate-Oxide SOI MOSFET for RF Power Amplifiers in Short- and Medium-range Wireless Applications,” 2003 IEEE MTT-S Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2003), Grainau, Germany, pp. 33-36, April 9-11, 2003.

2002:

  • K. Tsui, K. J. Chen, S. Lam, and M. Chan, “RF Power Characteristics of Thin Film Silicon-on-Sapphire MOSFET,” 2002 Int. Conf. Solid State Devices and Materials (SSDM’2002), Nagoya, Japan, Sep. 17-20, 2002, pp. 594-595.
  • Lydia L. W. Leung, K. J. Chen, X. Huo, and P.C.H. Chan, “On-Chip Microwave Filters on Standard Silicon Substrates Incorporating a low-k BCB Dielectric Layer,” 2002 European Microwave Conference, Sep. 23-27, Milan, Italy.
  • K. J. Chen, X. Huo, L. L. W. Leung, and P.C.H. Chan, “High-performance microwave passive components on silicon substrate,” 3rd International Conference on Microwave and Millimeter Wave Technology (ICMMT2002), Aug. 17-19, Beijing, 2002, pp. 263-266.
  • X. Huo, K. J. Chen, and P.C.H. Chan, “High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer,” Proceeding of 2002 IEEE RFIC Symposium, pp. 403-406, June 2-4, Seattle, USA.

1999:

  • Bin Zhang, K. J. Chen, Ruan Gang, Richard M. M. Chen, “A Novel RTD-HEMT-RTD Structure Based on Simulations”, The 1999 International Symposium on Circuits and Systems (ISCAS’99), Orlando, Florida, May 30,1999. pp I-178 – I-181.
  • Bin Zhang, K. J. Chen, Gang Ruan and Richard M.M. Chen, “A Symmetric Structure Based on Resonant Tunneling Diodes for Vision Chips”, 1999 National Symposium on Circuit and Systems (NSCAS’99), November 24, 1999.

1997:

  • K. J. Chen, “Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)”, Proc. 1997 Asia Pacific Microwave Conference, Hong Kong, Dec. 1997, pp. 529-532.
  • K. J. Chen, K. Maezawa, and M. Yamamoto, “High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)” Proc. 1997 European Solid-State Device Research Conference, Stuttgart, Germany, Sep. 1997, pp. 300-303.
  • G. F. Niu, K. J. Chen, R. M. M. Chen, K. Maezawa, T. Waho, and M. Yamamoto, “Circuit modeling of programmable logic gate based on controlled quenching of series-connected negative differential resistance devices,” 1997 IEEE Int. Symp. Circuits and Systems, Hong Kong, June 1997, pp. 1628-1631.

1996:

  • K. J. Chen, T. Waho, K. Maezawa, and M. Yamamoto, “A variable function logic gate based on controlled quenching of series connected resonant tunneling devices,” Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa, Japan, p.111, Sep. 1996.
  • M. Yamamoto, K. Maezawa, T. Waho, and K. J. Chen, “Quantum functional circuits using series-connected resonant tunneling devices,” Proc. of the 1996 Electronics Society Conference of IEICE, Kanazawa, Japan, p. 251-252, Sep. 1996.
  • T. Waho, K. J. Chen, and M. Yamamoto, “A quaternary quantizer using resonant tunneling devices Extended Abstracts of the 57th Autumn Meeting (1996), The Jap. Soc. of Appl. Phys. Fukuoka, Japan, vol. 3, p. 1061, Sep. 1996.
  • T. Waho, K. J. Chen, and M. Yamamoto, “A novel functional logic gate using resonant-tunneling devices for multiple-valued logic applications,” Extended Abst. 1996 Int. Conf. on Solid State Devices and Materials (SSDM’96), Yokohama, Japan, pp. 740-742, Aug. 1996.
  • K. J. Chen, T. Waho, K. Maezawa, and M. Yamamoto, “Programmable logic gate based on controlled quenching of series-connected negative differential resistance devices,” IEEE 54th Device Research Conference, Santa Barbara, USA, pp. 170-171, June 1996.
  • K. J. Chen, K. Maezawa, and M. Yamamoto, “A novel ultra-fast functional device: resonant tunneling high electron mobility transistor,” Proc. Of IEEE Hong Kong Electron Device Meeting, Hong Kong, pp. 60-63, June 1996.
  • T. Waho, K. J. Chen and M. Yamamoto, “A literal gate using resonant tunneling devices,” Proc. 1996 Int. Symp. on Multiple-Valued Logic, pp. 68-73, Spain, May 29-31, 1996.
  • K. J. Chen, T. Akeyoshi, and K. Maezawa, “InP-based ultrafast resonant tunneling high electron mobility transistors (RTHEMTs): novel I-V characteristics and circuit applications,” Proc. of the 1996 IEICE general conference, p. 123, Tokyo, Japan, Mar. 1996.
  • K. J. Chen, K. Maezawa, and M. Yamamoto, “High frequency characterization and circuit applications of resonant-tunneling high electron mobility transistors (RTHEMTs),” Extended Abstracts of the 44th Spring Meeting (1996), The Jap. Soc. of Appl. Phys. Saitama, Japan, vol. 3, p. 1307, March 1996.

1995:

  • K. J. Chen, K. Maezawa, and M. Yamamoto, “Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications,” Tech. Dig. 1995 Int. Electron Device Meeting (IEDM’95), Washington D. C., USA, pp. 379-382, Dec. 1995.
  • M. Yamamoto, K. Maezawa, K. J. Chen, T. Waho, N. Shimizu, and K. Arai, “InP-based resonant tunneling functional devices,” Meeting on The Current Status of Semiconductor Tunneling Devices (late news), The Royal Society, London, U.K., Nov. 8-9, 1995.
  • M. Yamamoto, K. Maezawa, and K. J. Chen, “Monostable-Bistable Transition Resonant Tunneling Logic Gate, MOBILE, Constructed with Monolithic Integration of RTD and FET,” Int. Workshop on Future Information Processing Technologies, Porvoo, Finland, Sep. 4-8, 1995.
  • K. J. Chen, K. Maezawa, and M. Yamamoto, “InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using resonant-tunneling devices,” Extended Abst. 1995 Int. Conf. on Solid State Devices and Materials (SSDM’95), Osaka, Japan, pp. 1081-1082, Aug. 1995.
  • K. J. Chen, K. Maezawa, K. Arai, M. Yamamoto, and T. Enoki, “High-performance enhancement-mode InAlAs/InGaAs HEMT’s,” Extended Abstracts of the 56th Autumn Meeting (1995), The Jap. Soc. of Appl. Phys. Kanazawa, Japan, vol. 3, p. 1113, Aug. 1995.
  • K. J. Chen, T. Enoki, K. Maezawa, K. Arai, and M. Yamamoto, “High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried gate,” Proc. 7th Int. Conf. on InP and Related Materials, Sapporo, Japan, pp. 428-431, May 1995.
  • K. J. Chen, T. Akeyoshi, and K. Maezawa, “Reset-set flip-flop based on a novel approach to modulating resonant-tunneling current with FETs,” Proc. of the 1995 IEICE general conference, Fukuoka, Japan, vol. 2, p. 130, Mar. 1995.

1994:

  • K. J. Chen, T. Akeyoshi and K. Maezawa, “Monostable-Bistable Transition Logic Elements (MOBILEs) Based on Monolithic integration of resonant tunneling diodes and FETs,” Extended Abstracts of 1994 International Conference on Solid State Devices and Materials (SSDM’94), Yokohama, Japan, pp. 979-980, 1994.
  • K. J. Chen, T. Akeyoshi and K. Maezawa, “Monolithic integration of resonant tunneling diodes and FETs for Monostable-Bistable Transition Logic Elements (MOBILEs),” Extended Abstracts of the 55th Autumn Meeting (1994), The Jap. Soc. of Appl. Phys., Nagoya, Japan, vol. 3, p. 1059, Sep. 1994.

1993:

  • K. J. Chen, C.H. Yang, and R.A. Wilson, “Dynamics of energy and phase relaxation in ultrafast resonant tunneling transistors”, American Physical Society annual meeting, Seattle, Washington, March 1993.

1992:

  • C. H. Yang, K. J. Chen, R.A. Wilson, and C.E.C. Wood, “Single transistor static memory cell: circuit application of a new quantum transistor”, 1992 International Conference on Solid State Devices and Materials (SSDM’92), Tsukuba, Japan, pp. 741-743, 1992.
  • K. J. Chen, C.H. Yang, and R.A. Wilson, “Observation of the negative persistent photoconductivity in an n-channel GaAs/AlxGa1-xAs single heterojunction”, American Physical Society annual meeting, Indianapolis, Indiana, March 1992.

1991:

  • K. J. Chen, and C. H. Yang, “Resonant tunneling between two- and three-dimensions: modeling of tunneling diodes and tunneling transistors”, American Physical Society annual meeting, Cincinnati, Ohio, March 1991.