In the press:
- “Tunneling through the power barrier”
- “Normally-off nitride semiconductor tunnel junction FET with high drive”
- “Fluorine: a fine dopant”
- “HKUST: GaN-on-Si integrated diode+transistor”
News:
- Li Yuan’s work on normally-off AlGaN/GaN metal-2DEG tunnel junction FETs will be published in IEEE Electron Device Letters, March 2011. This work has also been featured in Compoundsemiconductor and Semiconductor Today
- Xiaosen Liu’s work on GaN single polarity power supply comparator has been published in IEEE Electron Device letters, January 2011.
- Chenyue Ma presented the paper “Reliability of Enhancement-mode AlGaN/GaN HEMT under ON-state Gate Overdrive” in 2010 IEDM, Dec. 4-7. 2010, San Francisco, USA. This work is also featured in Semiconductor Today.
- Xiaosen Liu gave an oral presentation on at the 32nd IEEE Compound Semiconductor IC Symposium (CSICS), Oct. 3-6, 2010, Monterey, California, USA.
- Junxue Fu presented her paper “Microsphere manipulation and sensing system by AlGaN/GaN 2DEG,” in the 2010 International Workshop on Nitride Semiconductors, Sep. 19-24, 2010, Tampa, USA.
- Sen Huang presented his paper “Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlGaN/GaN heterostructures,” in the 2010 International Workshop on Nitride Semiconductors, Sep. 19-24, 2010, Tampa, USA.
- King Yuen Wong and Maojun Wang both had their papers published in IEEE Trans. Electron Devices, 2010.
- Former postdoc, Dr. Wanjun Chen has been promoted to associate professor at University of Electronic Science and Technology China.
- Chunhua’s paper on “Self-Protected GaN Power Devices with Reverse Drain Blocking and Froward Current Limiting Capabilities,” won the Charitat Award at The 22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD’09), June 6-10, 2010, Hiroshima, Japan
- Chunhua Zhou’s paper on dual-channel lateral field-effect rectifier has been published in IEEE Electron Device Letters, Jan. 2010.
- Wanjun Chen has returned to University of Electronic Science and Technology China as an assistant professor.
- King Yuen’s paper on zero-bias microwave mixer has been published in IEEE Trans. Electron Devices, Dec. 2009
- In collaboration with Prof. Jiannong Wang’s group, the work on Fermi-level’s depinning at Ni/AlGaN has been published in Applied Physics Letters.
- King Yuen successfully defended his Ph.D thesis and will join TSMC to work on 22nm CMOS technology, July 2009.
- King Yuen’s presentation on GaN smart power technology in ISPSD’09 (Barcelona, Spain) won the Charitat Award (for best student paper), June 2009.
- Wanjun Chen’s paper on single-chip boost converter has been published in IEEE EDL, May 2009
- Maojun Wang’s paper on fluorine incorporation in GaN has been published in Applied Physics Letters. April 2009
- Dec. 15-17, 2008: three papers are presented in 2008 International Electron Device Meeting (IEDM’08), San Francisco. Two of the papers are highlighted in Semiconductor Today.
- Wanjun’s work on AlGaN/GaN HEMT-compatible lateral field-effect rectifier was reported on compound semiconductor net.